ADVANCE
32, 48, 64, 128 MEG x 16/18
RAMBUS RIMM MODULES
RAMBUS
™
RIMM MODULE
FEATURES
• 184-pin RIMM™ module, 1mm pin spacing
• 32 Meg x 16/18 (64MB/72MB), 48 Meg x 16/18
(96MB/108MB), 64 Meg x 16/18 (128MB/144MB),
128 Meg x 16/18 (256MB/288MB)
• Uses (4, 6, 8, or 16) 8 Meg x 16/18 Direct RDRAM
®
devices
• High-speed 356 MHz and 400 MHz clocks with 2x data
rates
• 1.6 GB/s peak I/O bandwidth
• Rambus
®
signaling level (RSL) using differential 356
MHz and 400 MHz transmit and receive clocks
• Packet-oriented Rambus protocol transmitted in
8-bit-long packets
• Separate control and data buses for increased data
bandwidth capability
• Control bus with separate row and column buses for
easier command scheduling
• Programmable output delay timing for round-trip
delay of one to five cycles
• Write buffer to reduce READ latency
• Three precharge mechanisms for controller flexibility
• Programmable power states for flexibility in power
consumption versus data access time
• Power-down Self Refresh and active refresh
• 32ms, 16,384 cycle refresh
• 2.5V power supply with 1.8V CMOS supply for I/Os
®
MT4VR3216A, MT4VR3218A, MT6VR4816A,
MT6VR4818A, MT8VR6416A, MT8VR6418A,
MT16VR12816A, MT16VR12818A
For the latest data sheet revisions, please refer to the Micron Web
site:
www.micron.com/mti/msp/html/datasheet.html
PIN ASSIGNMENT
184-Pin RIMM Module
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
FRONT
GND
LDQA8*
GND
LDQA6
GND
LDQA4
GND
LDQA2
GND
LDQA0
GND
LCTMN
GND
LCTM
GND
NC
GND
LROW1
GND
LCOL4
GND
LCOL2
GND
LCOL0
GND
LDQB1
GND
LDQB3
GND
LDQB5
GND
LDQB7
GND
LSCK
V
CMOS
SOUT
V
CMOS
NC
GND
NC
V
DD
V
DD
NC
NC
NC
NC
PIN
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
BACK
GND
LDQA7
GND
LDQA5
GND
LDQA3
GND
LDQA1
GND
LCFM
GND
LCFMN
GND
NC
GND
LROW2
GND
LROW0
GND
LCOL3
GND
LCOL1
GND
LDQB0
GND
LDQB2
GND
LDQB4
GND
LDQB6
GND
LDQB8*
GND
LCMD
V
CMOS
SIN
V
CMOS
NC
GND
NC
V
DD
V
DD
NC
NC
NC
NC
PIN
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
FRONT
NC
NC
NC
NC
V
REF
GND
SCL
V
DD
SDA
SV
DD
SWP
V
DD
RSCK
GND
RDQB7
GND
RDQB5
GND
RDQB3
GND
RDQB1
GND
RCOL0
GND
RCOL2
GND
RCOL4
GND
RROW1
GND
NC
GND
RCTM
GND
RCTMN
GND
RDQA0
GND
RDQA2
GND
RDQA4
GND
RDQA6
GND
RDQA8*
GND
PIN
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
BACK
NC
NC
NC
NC
V
REF
GND
SA0
V
DD
SA1
SV
DD
SA2
V
DD
RCMD
GND
RDQB8*
GND
RDQB6
GND
RDQB4
GND
RDQB2
GND
RDQB0
GND
RCOL1
GND
RCOL3
GND
RROW0
GND
RROW2
GND
NC
GND
RCFMN
GND
RCFM
GND
RDQA1
GND
RDQA3
GND
RDQA5
GND
RDQA7
GND
OPTIONS
• Package
184-pin RIMM module (gold)
MARKING
G
-750
-745
-850
-845
-840
• Timing (Cycle Time)
356 MHz Clock Rate, Access Time = 50ns
356 MHz Clock Rate, Access Time = 45ns
400 MHz Clock Rate, Access Time = 50ns
400 MHz Clock Rate, Access Time = 45ns
400 MHz Clock Rate, Access Time = 40ns
• Component Revision Designator
Alpha character
Factory Defined
• Printed Circuit Board Revision Designator
Numeric character
Factory Defined
*Nonfunctional on x16 devices.
32, 48, 64, 128 Meg x 16/18 Rambus RIMM Modules
RM01.p65 – Rev. 9/99
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
Micron is a registered trademark of Micron Technology, Inc.
Rambus and RDRAM are registered trademarks and RIMM is a trademark of Rambus Inc.
ADVANCE
32, 48, 64, 128 MEG x 16/18
RAMBUS RIMM MODULES
GENERAL DESCRIPTION
The MT4VR3216/18A, MT6VR4816/18A, MT8VR6416/
18A and MT16VR12816/18A RDRAM RIMM modules are
general-purpose, high-performance, packet-oriented, dy-
namic random-access memories configured as 64MB/72MB,
96MB/108MB, 128/144MB and 256MB/288MB densities.
The RIMM modules consist of 4, 6, 8, or 16 Direct RDRAM
devices organized as 8M words by 16 or 18 bits.
The RIMM modules use Rambus signaling level (RSL)
technology to achieve 356 MHz or 400 MHz clock speeds
using differential clocks. Control and I/O data is trans-
ferred on both the rising and falling edges of the clock. This
allows data transfers at 1.25ns per two bytes (10ns per 16
bytes) during peak operation.
All DRAM commands are communicated to the RIMM
modules through a 3-bit row or 5-bit column bus inpackets
which are 8 bits in length. These packets are then decoded
on the RDRAM into the operation and address requiring
access.
Initialization and mode configurations for the RIMM
modules are accessed through slow speed CMOS Serial I/
O interface.
The architecture of Direct RDRAMs allows high sus-
tained bandwidth memory transactions for multiple, si-
multaneous, semi-random addresses. Each Direct RDRAM’s
thirty-two banks can support up to four simultaneous
transactions (within bank restrictions).
System-oriented features include power management,
byte masking and x16/18 organization. The two data bits in
the x18 organization are general and can be used for addi-
tional storage, bandwidth, or for error correction.
PART NUMBERS
PART NUMBER
MT4VR3216AG-750__
MT4VR3216AG-745__
MT4VR3216AG-850__
MT4VR3216AG-845__
MT4VR3216AG-840__
MT4VR3218AG-750__
MT4VR3218AG-745__
MT4VR3218AG-850__
MT4VR3218AG-845__
MT4VR3218AG-840__
MT6VR4816AG-750__
MT6VR4816AG-745__
MT6VR4816AG-850__
MT6VR4816AG-845__
MT6VR4816AG-840__
MT6VR4818AG-750__
MT6VR4818AG-745__
MT6VR4818AG-850__
MT6VR4818AG-845__
MT6VR4818AG-840__
MT8VR6416AG-750__
MT8VR6416AG-745__
MT8VR6416AG-850__
MT8VR6416AG-845__
MT8VR6416AG-840__
MT8VR6418AG-750__
MT8VR6418AG-745__
MT8VR6418AG-850__
MT8VR6418AG-845__
MT8VR6418AG-840__
MT16VR12816AG-750__
MT16VR12816AG-745__
MT16VR12816AG-850__
MT16VR12816AG-845__
MT16VR12816AG-840__
MT16VR12818AG-750__
MT16VR12818AG-745__
MT16VR12818AG-850__
MT16VR12818AG-845__
MT16VR12818AG-840__
CONFIGURATION CLK FREQ. ACCESS
(MHz)
TIME (ns)
32 Meg x 16
356
50
32 Meg x 16
356
45
32 Meg x 16
400
50
32 Meg x 16
400
45
32 Meg x 16
400
40
32 Meg x 18
356
50
32 Meg x 18
356
45
32 Meg x 18
400
50
32 Meg x 18
400
45
32 Meg x 18
400
40
48 Meg x 16
356
50
48 Meg x 16
356
45
48 Meg x 16
400
50
48 Meg x 16
400
45
48 Meg x 16
400
40
48 Meg x 18
356
50
48 Meg x 18
356
45
48 Meg x 18
400
50
48 Meg x 18
400
45
48 Meg x 18
400
40
64 Meg x 16
356
50
64 Meg x 16
356
45
64 Meg x 16
400
50
64 Meg x 16
400
45
64 Meg x 16
400
40
64 Meg x 18
356
50
64 Meg x 18
356
45
64 Meg x 18
400
50
64 Meg x 18
400
45
64 Meg x 18
400
40
128 Meg x 16
356
50
128 Meg x 16
356
45
128 Meg x 16
400
50
128 Meg x 16
400
45
128 Meg x 16
400
40
128 Meg x 18
356
50
128 Meg x 18
356
45
128 Meg x 18
400
50
128 Meg x 18
400
45
128 Meg x 18
400
40
NOTE:
All part numbers end with a two-place code (not shown),
designating component and PCB revisions. Consult
factory for current revision codes. Example:
MT8VR6416AG-750B1
32, 48, 64, 128 Meg x 16/18 Rambus RIMM Modules
RM01.p65 – Rev. 9/99
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
ADVANCE
32, 48, 64, 128 MEG x 16/18
RAMBUS RIMM MODULES
FUNCTIONAL BLOCK DIAGRAM
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
U0
SIO0
SIO1
SCK
CMD
V
REF
V
DD
Two 0.1µF per RDRAM
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
GND
U1
SIO0
SIO1
SCK
CMD
V
REF
V
REF
One 0.1µF per two RDRAM
GND
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
U2
SIO0
SIO1
SCK
CMD
V
REF
V
CMOS
One 0.1µF per two RDRAM
GND
SV
DD
One 0.1µF to SPD
GND
SERIAL PD
SCL
WP
47K
SDA
A0
A1
A2
SA0 SA1 SA2
RCFM
RCFMN
RCTM
RCTMN
RROW2..0
RCOL4..0
RDQA8..0
RDQB8..0
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
UN
SIO0
SIO1
SCK
CMD
V
REF
0.1µF
S
O
U
T
R
S
C
K
R
C
M
D
V
R
E
F
MODULE
CAPACITY
256MB
128MB
96MB
64MB
N
16
8
6
4
NOTE:
1. Rambus channel signals form a loop through the
RIMM module, with the exception of the SIO chain.
32, 48, 64, 128 Meg x 16/18 Rambus RIMM Modules
RM01.p65 – Rev. 9/99
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
ADVANCE
32, 48, 64, 128 MEG x 16/18
RAMBUS RIMM MODULES
PIN DESCRIPTIONS
PIN NUMBERS
102
104
12
14
2, 94, 4, 96, 6, 98, 8,
100, 10
124, 32, 122, 30, 120,
28, 118, 26, 116
108, 18, 110
20, 112, 22, 114, 24
175
173
81
79
91, 183, 89, 181, 87,
179, 85, 177, 83
153, 61, 155, 63, 157,
65, 159, 67, 161
169, 75, 167
73, 165, 71, 163, 69
36
SYMBOL
LCFM
LCFMN
LCTMN
LCTM
LDQA8..0
I/O
I
I
I
I
I/O
TYPE
RSL
RSL
RSL
RSL
RSL
DESCRIPTION
Clock from Master: Interface clock used for receiving
RSL signals from the Channel. Positive polarity.
Clock from Master: Interface clock used for receiving
RSL signals from the Channel. Negative polarity.
Clock to Master: Interface clock used for transmitting
RSL signals from the Channel. Negative polarity.
Clock to Master: Interface clock used for transmitting
RSL signals from the Channel. Positive polarity.
Data Bus A: A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. LDQA8 is
non-functional on x16 devices.
Data Bus B: A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. LDQB8 is
non-functional on x16 devices.
Row Bus: 3-bit bus containing control and address
information for row accesses.
Column Bus: 5-bit bus containing control and address
information for Column accesses.
Clock from Master: Interface clock used for receiving
RSL signals from the Channel. Positive polarity.
Clock from Master: Interface clock used for receiving
RSL signals from the Channel. Negative polarity.
Clock to Master: Interface clock used for transmitting
RSL signals from the Channel. Negative polarity.
Clock to Master: Interface clock used for transmitting
RSL signals from the Channel. Positive polarity.
Data Bus A: A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. RDQA8 is
non-functional on x16 devices.
Data Bus B: A 9-bit bus carrying a byte of read or write
data between the Channel and the RDRAM. RDQB8 is
non-functional on x16 devices.
Row Bus: 3-bit bus containing control and address
information for row accesses.
Column Bus: 5-bit bus containing control and address
information for Column accesses.
Serial I/O: Pin for reading from and writing to the control
registers. Attaches to SIO1 of the last RDRAM on the
module.
Serial I/O: Pin for reading from and writing to the control
registers. Attaches to SIO0 of the first RDRAM on the
module.
LDQB8..0
I/O
RSL
LROW2..0
LCOL4..0
RCFM
RCFMN
RCTMN
RCTM
RDQA8..0
I
I
I
I
I
I
I/O
RSL
RSL
RSL
RSL
RSL
RSL
RSL
RDQB8..0
I/O
RSL
RROW2..0
RCOL4..0
S
OUT
I
I
I/O
RSL
RSL
CMOS
128
S
IN
I/O
CMOS
32, 48, 64, 128 Meg x 16/18 Rambus RIMM Modules
RM01.p65 – Rev. 9/99
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
ADVANCE
32, 48, 64, 128 MEG x 16/18
RAMBUS RIMM MODULES
PIN DESCRIPTIONS (continued)
PIN NUMBERS
35, 37, 127, 129
126
34
151
SYMBOL
V
CMOS
LCMD
LSCK
RCMD
I
I
I
CMOS
CMOS
CMOS
I/O
TYPE
DESCRIPTION
Supply voltage for CMOS level signals.
Serial Command Pin: Pin used to read from and write to
the control registers. Also used for power management.
Clock Input: Pin used to read from and write to the
control registers.
Serial Command Input: Pin used to read from and
write to the control registers. Also used for power
management.
Clock Input: Pin used to read from and write to the
control registers.
Serial Presence-Detect Clock.
Serial Presence-Detect Data (Open Collector I/O).
Serial Presence-Detect Write Protect (active high). When
low, the SPD can be written as well as read.
Serial Presence-Detect Address 0
Serial Presence-Detect Address 1
Serial Presence-Detect Address 2
Supply voltage for the RDRAM core and interface logic.
SPD voltage. Used for signals SCL, SDA, SWE, SA0,
SA1 and SA2.
Logic threshold reference voltage for RSL signals.
Ground reference for RDRAM core and interface.
59
53
55
57
145
147
149
41, 42, 54, 58, 133,
134, 146, 150
56, 148
51, 143
1, 3, 5, 7, 9, 11, 13, 15,
17, 19, 21, 23, 25, 27,
29, 31, 33, 39, 52, 60,
62, 64, 66, 68, 70, 72,
74, 76, 78, 80, 82, 84,
86, 88, 90, 92, 93, 95,
97, 99, 101, 103, 105,
107, 109, 111, 113,
115, 117, 119, 121,
123, 125, 131, 144,
152, 154, 156, 158,
160, 162, 164, 166,
168, 170, 172, 174,
176, 178, 180, 182,
184
16, 38, 40, 43-50, 77,
106, 130, 132,
135-142, 171
RSCK
SCL
SDA
SWP
SA0
SA1
SA2
V
DD
SV
DD
V
REF
GND
I
I
I/O
I
I
I
I
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
NC (24)
No Connection. These 24 pins are all reserved for future
use.
32, 48, 64, 128 Meg x 16/18 Rambus RIMM Modules
RM01.p65 – Rev. 9/99
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
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