DIGITRON SEMICONDUCTORS
T2802 SERIES
BIDIRECTIONAL TRIODE THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Repetitive peak off-stage voltage
(1)
(T
J
= -40 to +100°C, gate open)
T2802B
T2802C
T2802D
T2802E
T2802M
RMS on-state current
(conduction angle = 360°, T
C
= 80°C)
Peak non-repetitive surge current
(One Cycle, 60Hz, T
J
= 80°C)
Circuit fusing considerations
(T
J
= -40 to +100°C, t = 1.25 to 10ms)
Peak gate power
(pulse width = 1.0µs)
Average gate power
Peak gate trigger current
(pulse width = 1.0µs)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
200
300
400
500
600
8
100
50
16
0.35
4
-40 to +100
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristics
Thermal resistance, junction to case
Symbol
R
Ө
JC
Max
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Peak off state current
(Rated V
DRM
@ T
C
= 100°C, gate open)
Peak on-state voltage
(I
TM
= 30A peak)
DC gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 12Ω)
MT2(+), G(+)
MT2(-), G(-)
DC gate trigger voltage
(continuous dc) all polarities
(V
D
= 12V, R
L
= 100Ω)
(V
D
= V
DRM
, R
L
= 125Ω, T
C
= 100°C)
Holding current
(either direction)
(V
D
= 12V, gate open, I
T
= 125mA)
Gate controlled turn on time
(V
D
= Rated V
DRM
, I
T
= 10A, I
GT
= 80mA, rise time = 0.1µs)
Critical rate of rise of commutating voltage
(Rated V
DRM
, I
T(RMS)
= 8A, commutating di/dt = 4.3A/ms, gate unenergized, T
C
= 80°C)
Symbol
I
DRM
V
TM
Min
-
-
Typ
-
1.7
Max
2
2
Unit
mA
Volts
I
GT
-
-
-
0.2
-
-
-
25
25
1.25
-
20
1.6
10
50
50
2.5
-
60
-
-
mA
V
GT
Volts
I
H
t
gt
dv/dt(c)
mA
µs
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
DIGITRON SEMICONDUCTORS
T2802 SERIES
Characteristic
Critical rate of rise of off-state voltage
(Rated V
DRM
, exponential voltage rise, gate open, T
C
= 100°C)
T2802B
T2802C
T2802D
T2802E
T2802M
BIDIRECTIONAL TRIODE THYRISTORS
Symbol
Min
Typ
Max
Unit
dv/dt
100
85
75
65
60
-
-
-
-
-
-
-
-
-
-
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-220AB
Alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130206
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