100 V, 66 A, 8.8 mΩ Low R
DS(ON)
N ch Trench Power MOSFET
SKI10123
Features
V
(BR)DSS
-------------------------------- 100 V (I
D
= 100
µA)
I
D
---------------------------------------------------------- 66 A
R
DS(ON)
-------- 12.1 mΩ max. (V
GS
= 10 V, I
D
= 33.0 A)
Q
g
------45.2 nC (V
GS
= 4.5 V, V
DS
= 50 V, I
D
= 33.0 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-263
(4)
D
(1) (2) (3)
G D S
Not to scale
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Unless otherwise specified, T
A
= 25 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
E
AS
I
AS
P
D
T
J
T
STG
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
V
DD
= 50 V, L = 1 mH,
I
AS
= 13 A, unclamped,
R
G
= 4.7 Ω,
Refer to Figure 1
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
Test conditions
Rating
100
± 20
66
132
66
132
170
30
135
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
SKI10123-DS Rev.1.3
May. 23, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
SKI10123
Thermal Characteristics
Parameter
Thermal Resistance
(Junction to Case)
Unless otherwise specified, T
A
= 25 °C
Symbol
R
θJC
R
θJA
Test Conditions
Min.
−
−
Typ.
−
−
Max.
0.9
62.5
Unit
°C/W
°C/W
Thermal Resistance
(
Junction to Ambient)
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Drain to Source
On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
Q
g1
Q
g2
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V
I
D
= 33.0 A
V
GS
= 10 V, R
G
= 4.7 Ω
Refer to Figure 2
V
DS
= 50 V
I
D
= 33.0 A
Test Conditions
I
D
= 100 μA, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 1.5 mA
I
D
= 33.0 A, V
GS
= 10 V
I
D
= 16.5 A, V
GS
= 4.5 V
f = 1 MHz
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
Min.
100
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
2.0
8.8
9.6
0.8
6420
465
280
95.6
45.2
16.6
12.4
10.7
10.1
52.8
21.4
0.9
54.6
106.6
Max.
−
100
± 100
2.5
12.1
12.9
−
−
−
−
−
−
−
−
−
−
−
−
1.5
−
−
Unit
V
µA
nA
V
mΩ
mΩ
Ω
pF
nC
ns
V
SD
t
rr
Q
rr
I
S
= 33.0 A, V
GS
= 0 V
I
F
= 33.0 A
di/dt = 100 A/µs
Refer to Figure 3
−
−
−
V
ns
nC
SKI10123-DS Rev.1.3
May. 23, 2014
SANKEN ELECTRIC CO.,LTD.
2
SKI10123
Test Circuits and Waveforms
L
I
D
V
DS
R
G
V
GS
0V
V
DD
E
AS
½
V
(BR)DSS
1
2
L I
AS
2
V
(BR)DSS
V
DD
V
(BR)DSS
I
AS
V
DS
I
D
V
DD
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
R
L
90%
V
GS
V
DS
R
G
V
GS
0V
P.W. = 10
μs
Duty cycle
≤
1 %
(a) Test Circuit
Figure 2 Switching Time
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
10%
V
DD
V
DS
90%
10%
(b) Waveform
D.U.T.
I
F
L
I
F
V
DD
R
G
V
GS
0V
0V
di/dt
t
rr
I
RM
× 90 %
I
RM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
SKI10123-DS Rev.1.3
May. 23, 2014
SANKEN ELECTRIC CO.,LTD.
3
SKI10123
RDS(ON)-ID characteristics (typical)
VGS=10V
25
25
RDS(ON)-ID characteristics (typical)
VGS=4.5V
140
120
ID-VGS characteristics (typical)
VDS=5V
20
Tc = 125℃
20
Tc = 125℃
100
80
60
40
RDS(ON) (mΩ )
15
75℃
RDS(ON) (mΩ )
15
10
25℃
10
25℃
ID (A)
75℃
Tc =125℃
75℃
25℃
5
5
20
0
0
20
40
60
80
100
120
140
0
0
20
40
60
80
100
120
140
0
0
1
2
3
4
5
ID (A)
ID (A)
VGS (V)
VDS-VGS characteristics (typical)
Tc=25℃
1.0
IDR-VSD characteristics (typical)
Tc=25℃
140
120
VGS=10V
IDR-VSD characteristics (typical)
VDS=0V
140
120
100
0.8
100
VDS (V)
IDR (A)
IDR (A)
0.6
80
60
40
20
VGS=4.5V
80
Tc =125℃
0.4
ID=33.0A
ID=29.6A
ID=16.5A
0.0
0
5
10
15
3V
60
75℃
0.2
0V
40
25℃
20
0
0
0
0.5
1
1.5
0
0.5
1
1.5
VGS (V)
VSD (V)
VSD (V)
Capacitance-VDS characteristics (typical)
10000
Ciss
10
15
VGS - Qg characteristics (typical)
3
Vth-Tc characteristics (typical)
Capacitance (pF)
1000
VGS (V)
Coss
100
Ta=25℃
VGS=0V
f =1MHz
10
0
10
20
30
Crss
5
Tc=25℃
VDS=50V
ID=33A
Vth (V)
2
1
ID=1.5mA
VGS=VDS
0
40
50
0
0
25
50
75
100
25
50
75
100
125
150
Qg (nC)
VDS (V)
Tc (℃)
RDS(ON)-Tc characteristics (typical)
24
20
16
12
8
4
0
25
50
75
100
125
150
24
20
16
12
8
4
0
RDS(ON)-Tc characteristics (typical)
130
125
120
115
110
BVDSS-Tc characteristics (typical)
RDS（ON） (mΩ)
RDS（ON） (mΩ)
BVDSS (V)
ID=33A
VGS=10V
ID=1mA
VGS=0V
ID=16.5A
VGS=4.5V
25
50
75
100
125
150
105
100
25
50
75
100
125
150
Tc (℃)
Tc (℃)
Tc (℃)
SKI10123-DS Rev.1.3
May. 23, 2014
SANKEN ELECTRIC CO.,LTD.
4
SKI10123
PD-Ta Derating
140
120
100
80
SAFE OPERATING AREA
1000
ID(pulse) MAX
100
PT=100μs
ID (A)
ＰＤ
(W)
10
PT=1ms
60
40
20
0
1
1 shot
Tc=25℃
0.1
0
50
100
150
0.1
1
10
100
Ta (℃)
VDS (V)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+01
Rth j-c (℃/W)
1.E+00
1.E-01
Tc = 25℃
1shot
VDS < 10V
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
P.T. (sec)
SKI10123-DS Rev.1.3
May. 23, 2014
SANKEN ELECTRIC CO.,LTD.
5
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