40 V, 80 A, 3.1 mΩ Low R
DS(ON)
N ch Trench Power MOSFET
SKI04033
Features
V
(BR)DSS
--------------------------------- 40 V (I
D
= 100
µA)
I
D
---------------------------------------------------------- 80 A
R
DS(ON)
---------- 3.9 mΩ max. (V
GS
= 10 V, I
D
= 58.5 A)
Q
g
------26.4 nC (V
GS
= 4.5 V, V
DS
= 20 V, I
D
= 58.5 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-263
(4)
D
(1) (2) (3)
G D S
Not to scale
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Unless otherwise specified, T
A
= 25 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
E
AS
I
AS
P
D
T
J
T
STG
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
V
DD
= 20 V, L = 1 mH,
I
AS
= 11.2 A, unclamped,
R
G
= 4.7 Ω,
Refer to Figure 1
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
Test conditions
Rating
40
± 20
80
161
80
161
126
23.3
116
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
SKI04033-DS Rev.1.3
May.23, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
SKI04033
Thermal Characteristics
Parameter
Thermal Resistance
(Junction to Case)
Unless otherwise specified, T
A
= 25 °C
Symbol
R
θJC
R
θJA
Test Conditions
Min.
−
−
Typ.
−
−
Max.
1.1
62.5
Unit
°C/W
°C/W
Thermal Resistance
(
Junction to Ambient)
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Drain to Source
On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
Q
g1
Q
g2
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V
I
D
= 58.5 A
V
GS
= 10 V, R
G
= 4.7 Ω
Refer to Figure 2
V
DS
= 20 V
I
D
= 58.5 A
Test Conditions
I
D
= 100 μA, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 58.5 A, V
GS
= 10 V
I
D
= 29.3 A, V
GS
= 4.5 V
f = 1 MHz
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
Min.
40
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
2.0
3.1
3.9
1.1
3910
620
360
56.1
26.4
9.0
9.7
6.2
8.4
28.9
17.9
0.9
38.7
37.2
Max.
−
100
± 100
2.5
3.9
5.7
−
−
−
−
−
−
−
−
−
−
−
−
1.5
−
−
Unit
V
µA
nA
V
mΩ
mΩ
Ω
pF
nC
ns
V
SD
t
rr
Q
rr
I
S
= 58.5 A, V
GS
= 0 V
I
F
= 58.5 A
di/dt = 100 A/µs
Refer to Figure 3
−
−
−
V
ns
nC
SKI04033-DS Rev.1.3
May.23, 2014
SANKEN ELECTRIC CO.,LTD.
2
SKI04033
Test Circuits and Waveforms
L
I
D
V
DS
R
G
V
GS
0V
V
DD
E
AS
½
V
(BR)DSS
1
2
L
I
AS
2
V
(BR)DSS
V
DD
V
(BR)DSS
I
AS
V
DS
I
D
V
DD
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
R
L
90%
V
GS
V
DS
R
G
V
GS
0V
P.W. = 10
μs
Duty cycle
≤
1 %
(a) Test Circuit
Figure 2 Switching Time
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
10%
V
DD
V
DS
90%
10%
(b) Waveform
D.U.T.
I
F
L
I
F
V
DD
R
G
V
GS
0V
0V
di/dt
t
rr
I
RM
× 90 %
I
RM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
SKI04033-DS Rev.1.3
May.23, 2014
SANKEN ELECTRIC CO.,LTD.
3
SKI04033
RDS(ON)-ID characteristics (typical)
VGS=10V
8
7
6
Tc = 125℃
RDS(ON)-ID characteristics (typical)
VGS=4.5V
10
9
8
7
120
Tc = 125℃
ID-VGS characteristics (typical)
VDS=5V
160
140
RDS(ON) (mΩ )
5
4
RDS(ON) (mΩ )
75℃
25℃
6
5
25℃
100
ID (A)
75℃
80
60
40
20
0
Tc =125℃
75℃
25℃
3
2
1
0
0
20
40
60
80
100 120 140 160
4
3
2
1
0
0
20
40
60
80
100 120 140 160
0
1
2
3
4
5
ID (A)
ID (A)
VGS (V)
VDS-VGS characteristics (typical)
Tc=25℃
0.4
IDR-VSD characteristics (typical)
Tc=25℃
160
140
VGS=10V
IDR-VSD characteristics (typical)
VDS=0V
160
140
120
0.3
120
VDS (V)
IDR (A)
0.2
ID=58.5A
ID=51.0A
80
60
40
20
3V
0V
IDR (A)
100
VGS=4.5V
100
80
60
40
20
0
Tc =125℃
75℃
25℃
0.1
ID=29.3A
0.0
0
5
10
15
0
0
0.5
1
1.5
0
0.5
1
1.5
VGS (V)
VSD (V)
VSD (V)
Capacitance-VDS characteristics (typical)
10000
Ciss
15
VGS - Qg characteristics (typical)
3
Vth-Tc characteristics (typical)
Capacitance (pF)
100
Ta=25℃
VGS=0V
f =1MHz
10
0
10
20
Crss
VGS (V)
5
Tc=25℃
VDS=20V
ID=58.5A
Vth (V)
1000
Coss
10
2
1
ID=1mA
VGS=VDS
0
0
30
40
0
20
40
60
25
50
75
100
125
150
VDS (V)
Qg (nC)
Tc (℃)
RDS(ON)-Tc characteristics (typical)
8
7
8
10
RDS(ON)-Tc characteristics (typical)
50
BVDSS-Tc characteristics (typical)
6
48
RDS（ON） (mΩ)
RDS（ON） (mΩ)
5
4
3
2
1
0
25
50
75
100
125
150
6
BVDSS (V)
46
4
44
ID=58.5A
VGS=10V
2
ID=29.3A
VGS=4.5V
0
25
50
75
100
125
150
42
ID=1mA
VGS=0V
40
25
50
75
100
125
150
Tc (℃)
Tc (℃)
Tc (℃)
SKI04033-DS Rev.1.3
May.23, 2014
SANKEN ELECTRIC CO.,LTD.
4
SKI04033
PD-Ta Derating
120
SAFE OPERATING AREA
1000
ID(pulse) MAX
PT=100μs
90
100
ID (A)
ＰＤ
(W)
60
10
PT=1ms
30
1
1 shot
Tc=25℃
0
0.1
0
50
100
150
0.1
1
10
100
Ta (℃)
VDS (V)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+01
Rth j-c (℃/W)
1.E+00
1.E-01
Tc = 25℃
1shot
VDS < 10V
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
P.T. (sec)
SKI04033-DS Rev.1.3
May.23, 2014
SANKEN ELECTRIC CO.,LTD.
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
