SRAM Module, 512KX8, 100ns, CMOS, PDIP32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Syntaq Technology Inc |
| 包装说明 | DIP, DIP32,.6 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 100 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDIP-T32 |
| JESD-609代码 | e0 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | SRAM MODULE |
| 内存宽度 | 8 |
| 端子数量 | 32 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP32,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.00028 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.1 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| SYS8512FKXL-10 | SYS8512FKXL-85 | SYS8512FKXLI-55 | SYS8512FKXI-85 | SYS8512FKXLI-10 | SYS8512FKXI-70 | SYS8512FKXI-55 | SYS8512FKX-85 | SYS8512FKX-70 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | SRAM Module, 512KX8, 100ns, CMOS, PDIP32 | SRAM Module, 512KX8, 85ns, CMOS, PDIP32 | SRAM Module, 512KX8, 55ns, CMOS, PDIP32 | SRAM Module, 512KX8, 85ns, CMOS, PDIP32 | SRAM Module, 512KX8, 100ns, CMOS, PDIP32 | SRAM Module, 512KX8, 70ns, CMOS, PDIP32 | SRAM Module, 512KX8, 55ns, CMOS, PDIP32 | SRAM Module, 512KX8, 85ns, CMOS, PDIP32 | SRAM Module, 512KX8, 70ns, CMOS, PDIP32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 包装说明 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 | DIP, DIP32,.6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| 最长访问时间 | 100 ns | 85 ns | 55 ns | 85 ns | 100 ns | 70 ns | 55 ns | 85 ns | 70 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 | R-PDIP-T32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
| 内存集成电路类型 | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE | SRAM MODULE |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 70 °C | 70 °C |
| 最低工作温度 | - | - | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | - | - |
| 组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.00028 A | 0.00028 A | 0.00028 A | 0.0005 A | 0.00028 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 4.5 V | 2 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | Syntaq Technology Inc | - | Syntaq Technology Inc | Syntaq Technology Inc | Syntaq Technology Inc | Syntaq Technology Inc | Syntaq Technology Inc | Syntaq Technology Inc | Syntaq Technology Inc |
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