UNISONIC TECHNOLOGIES CO., LTD
4N60
4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
4N60
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* R
DS(ON)
< 2.5Ω @V
GS
= 10 V
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness
SYMBOL
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QW-R502-061.Y
4N60
ORDERING INFORMATION
1
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
S
Pin Assignment
3
4
5
6
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S
-
-
-
S G D D
Ordering Number
Package
Lead Free
Halogen Free
4N60L-TA3-T
4N60G-TA3-T
TO-220
4N60L-TF1-T
4N60G-TF1-T
TO-220F1
4N60L-TF2-T
4N60G-TF2-T
TO-220F2
4N60L-TF3-T
4N60G-TF3-T
TO-220F
4N60L-TF3T-T
4N60G-TF3T-T
TO-220F3
4N60L-TM3-T
4N60G-TM3-T
TO-251
4N60L-TMS-T
4N60G-TMS-T
TO-251S
4N60L-TN3-R
4N60G-TN3-R
TO-252
4N60L-TND-R
4N60G-TND-R
TO-252D
4N60L-T2Q-T
4N60G-T2Q-T
TO-262
4N60L-TQ2-T
4N60G-TQ2-T
TO-263
4N60L-TQ2-R
4N60G-TQ2-R
TO-263
4N60L-K08-5060-R
4N60G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain S: Source
Power MOSFET
7
-
-
-
-
-
-
-
-
-
-
-
-
D
8
-
-
-
-
-
-
-
-
-
-
-
-
D
Packing
Tube
Tube
Tube
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Tape Reel
Tape Reel
Tube
Tube
Tape Reel
Tape Reel
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
TO-262
TO-263
MARKING
DFN-8(5×6)
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QW-R502-061.Y
4N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
16
A
260
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
TO-220F/TO-220F1
36
TO-220F3
Power Dissipation
TO-220F2
P
D
38
W
TO-251/TO-251S
50
TO-252/TO-252D
DFN-8(5×6)
30
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251/TO-251S
TO-252/TO-252D
DFN-8(5×6)
TO-220/TO-262/TO-263
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
DFN-8(5×6)
SYMBOL
RATINGS
62.5
θ
JA
110
75
1.18
3.47
θ
JC
3.28
2.5
4.17
°С/W
°С/W
UNIT
Junction to Ambient
Junction to Case
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QW-R502-061.Y
4N60
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
600
V
10
μA
100 µA
100 nA
-100 nA
V/°С
4.0
2.5
670
100
50
55
110
200
150
100
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 480V, T
C
= 125°С
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 300V, I
D
= 4.0A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 480V,I
D
= 4.0A,
Gate-Source Charge
Q
GS
V
GS
= 10V (Note 1, 2)
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= 4.4A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
0.6
2.0
1.9
550
80
30
35
80
160
120
80
5
20
1.4
4.4
17.6
250
1.5
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QW-R502-061.Y
4N60
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-061.Y
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