9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Rochester Electronics |
零件包装代码 | TO-220AB |
包装说明 | LEAD FREE, TO-220F, 3 PIN |
针数 | 3 |
Reach Compliance Code | unknown |
其他特性 | FAST SWITCHING |
雪崩能效等级(Eas) | 700 mJ |
外壳连接 | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V |
最大漏极电流 (ID) | 9.5 A |
最大漏源导通电阻 | 0.73 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e3 |
湿度敏感等级 | NOT APPLICABLE |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT APPLICABLE |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 38 A |
认证状态 | COMMERCIAL |
表面贴装 | NO |
端子面层 | MATTE TIN |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT APPLICABLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
FQPF10N60C | FQP10N60C | FQPF10N60CT | |
---|---|---|---|
描述 | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN |
厂商名称 | Rochester Electronics | Rochester Electronics | Rochester Electronics |
零件包装代码 | TO-220AB | TO-220AB | TO-220AB |
包装说明 | LEAD FREE, TO-220F, 3 PIN | TO-220, 3 PIN | LEAD FREE, TO-220F, 3 PIN |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
其他特性 | FAST SWITCHING | FAST SWITCHING | FAST SWITCHING |
雪崩能效等级(Eas) | 700 mJ | 700 mJ | 700 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V | 600 V | 600 V |
最大漏极电流 (ID) | 9.5 A | 9.5 A | 9.5 A |
最大漏源导通电阻 | 0.73 Ω | 0.73 Ω | 0.73 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 38 A | 38 A | 38 A |
认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
表面贴装 | NO | NO | NO |
端子面层 | MATTE TIN | MATTE TIN | NOT SPECIFIED |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
是否无铅 | 不含铅 | 不含铅 | - |
是否Rohs认证 | 符合 | 符合 | - |
外壳连接 | ISOLATED | - | ISOLATED |
JESD-609代码 | e3 | e3 | - |
湿度敏感等级 | NOT APPLICABLE | NOT APPLICABLE | - |
峰值回流温度(摄氏度) | NOT APPLICABLE | NOT APPLICABLE | - |
处于峰值回流温度下的最长时间 | NOT APPLICABLE | NOT APPLICABLE | - |
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