3213
AND
3214
Package Designator ‘LH’ Pinning
(SOT23W)
MICROPOWER, ULTRA-SENSITIVE
HALL-EFFECT SWITCHES
The A3213xx and A3214xx integrated circuits are ultra-sensitive, pole
independent Hall-effect switches with a latched digital output. They are
especially suited for operation in battery-operated, hand-held equipment such
as cellular and cordless telephones, pagers, and palmtop computers. A 2.4 volt
to 5.5 volt operation and a unique clocking scheme reduce the average oper-
ating power requirements – the A3213xx to 825 µW, the A3214xx to 14 µW
(typical at 2.75 V)! Except for operating duty cycle and average operating
current, the A3213xx and A3214xx are identical.
Unlike other Hall-effect switches, either a north or south pole of sufficient
strength will turn the output on; in the absence of a magnetic field, the output
is off. The polarity independence and minimal power requirement allows
these devices to easily replace reed switches for superior reliability and ease of
manufacturing, while eliminating the requirement for signal conditioning.
1
SUPPLY
GROUND
2
OUTPUT
Data Sheet
27622.62F
3
V
DD
Dwg. PH-016-1
Pinning is shown viewed from branded side.
ABSOLUTE MAXIMUM RATINGS
at T
A
= +25°C
Supply Voltage, V
DD
..............................
6 V
Magnetic Flux Density, B ..........
Unlimited
Output Off Voltage, V
OUT
......................
6 V
Output Current, I
OUT
...........................
1 mA
Junction Temperature, T
J
................
+170°C
Operating Temperature Range, T
A
Suffix 'E' ......................
-40°C to +85°C
Suffix 'L' ...................
-40°C to +150°C
Storage Temperature Range,
T
S
..............................
-65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still sus-
ceptible to damage if exposed to extremely
high static electrical charges.
Improved stability is made possible through chopper stabilization (dy-
namic offset cancellation), which reduces the residual offset voltage normally
caused by device overmolding, temperature dependencies, and thermal stress.
These devices include on a single silicon chip a Hall-voltage generator,
small-signal amplifier, chopper stabilization, a latch, and a MOSFET output.
Advanced BiCMOS processing is used to take advantage of low-voltage and
low-power requirements, component matching, very low input-offset errors,
and small component geometries.
Range 'E' devices are rated for operation over a temperature range of
-40°C to +85°C; range 'L' devices are rated for operation over a temperature
range of -40°C to +150°C. Two package styles provide a magnetically opti-
mized package for most applications. ‘LH’ is a miniature low-profile surface-
mount package, ‘UA’ is a three-lead SIP for through-hole mounting. Each
package is available in a lead (Pb) free version (suffix,
–T)
, with a 100% matte
tin plated leadframe.
FEATURES
■
■
■
■
Micropower Operation
Operate With North or South Pole
2.4 V to 5.5 V Battery Operation
Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
ESD Protected to 5 kV
Solid-State Reliability
Small Size
Easily Manufacturable With Magnet Pole Independence
■
■
■
■
3213
AND
3214
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS: unless otherwise noted
over operating voltage and temperature range.
Limits
Characteristic
Supply Voltage Range
Output Leakage Current
Output On Voltage
Awake Time
Period
Symbol
V
DD
I
OFF
V
OUT
t
awake
t
period
A3213xx
A3214xx
Duty Cycle
d.c.
A3213xx
A3214xx
Chopping Frequency
Supply Current
f
C
I
DD(EN)
I
DD(DIS)
I
DD(AVG)
Chip awake (enabled)
Chip asleep (disabled)
A3213xx
A3214xx
ESD, Human Body Model
ESD, Machine Model
–
–
Per CDF-AEC-Q100-002
Per JESD22-A115
Test Conditions
Operating
1)
V
OUT
= 5.5 V, B
RPN
< B < B
RPS
I
OUT
= 1 mA, V
DD
= 3.0 V
Min.
2.4
–
–
–
–
–
–
–
–
–
–
–
–
5.0
350
Typ.
3.0
<1.0
100
60
240
60
25
0.10
340
–
–
460
11
–
–
Max.
5.5
1.0
300
90
360
90
–
–
–
2.0
8.0
850
22
–
–
Units
V
µA
mV
µs
µs
ms
%
%
kHz
mA
µA
µA
µA
kV
V
NOTES: 1. Operate and release points will vary with supply voltage.
2. B
OPx
= operate point (output turns ON); B
RPx
= release point (output turns OFF).
3. Typical Data is at T
A
= +25°C and V
DD
= 3.0 V and is for design information only.
MAGNETIC CHARACTERISTICS: over operating voltage and temperature range.
Limits
Characteristic
Operate Points
Symbol
B
OPS
B
OPN
Release Points
B
RPS
B
RPN
Hysteresis
B
hys
Test Conditions
South pole to branded side
North pole to branded side
South pole to branded side
North pole to branded side
|B
OPx
- B
RPx
|
Min.
–
-70
10
–
–
Typ.
42
-48
32
-38
10
Max.
70
–
–
-10
–
Units
G
G
G
G
G
NOTES: 1. As used here, negative flux densities are defined as less than zero (algebraic convention) and -50 G is less than +10 G.
2. B
OPx
= operate point (output turns ON); B
RPx
= release point (output turns OFF).
3. Typical Data is at T
A
= +25°C and V
DD
= 3.0 V and is for design information only.
4. 1 gauss (G) is exactly equal to 0.1 millitesla (mT).
www.allegromicro.com
4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
