PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Features
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
20
19
18
17
16
15
33
35
37
39
41
43
45
47
49
50
Two-carrier WCDMA 3GPP
•
•
•
Broadband internal input and output matching
Enhanced for use in DPD error correction systems
Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
Typical CW performance, 1990 MHz, 30 V
- Output power at P
1dB
= 240 W
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
Integrated ESD protection. Human Body Model,
Class 2 (minimum)
Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
Pb-free, RoHS-compliant
Drain Efficiency (%)
Gain
40
30
20
10
0
Gain (dB)
•
Efficiency
•
•
•
•
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test
fixture)
V
DD
= 30 V, I
DQ
= 1.9 A, P
OUT
= 50 W average, ƒ
1
= 1980 MHz, ƒ
2
= 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
—
—
—
Typ
19
28
–35
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
V
DD
= 30 V, I
DQ
= 1.9 A, P
OUT
= 220 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Two-tone Measurements
(tested in Infineon test fixture)
Characteristic
Gain
Symbol
G
ps
Min
17
40
—
Typ
18
41.5
–29
Max
—
—
–27
Unit
dB
%
dBc
Drain Efficiency
Intermodulation Distortion
h
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 30 V, I
DQ
= 1.9 A
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.03
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 200 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–6 to +10
200
–40 to +150
0.262
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB192503EL V1
PTFB192503EL V1 R250
PTFB192503FL V2
PTFB192503FL V2 R250
Package Type
H-33288-6
H-33288-6
H-34288-4/2
H-34288-4/2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Thermally-enhanced earless flange, single-ended
Shipping
Tray
Tape & Reel, 250 pcs
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 15
Rev. 09, 2010-11-09
PTFB192503EL
PTFB192503FL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, 3GPP WCDMA,
PAR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
-25
-30
-35
1990
1990
1960
1960
1930
1930
Lower
Upper
Lower
Upper
Lower
Upper
-20
-25
40
IMD Up
IMD Low
Efficiency
35
30
25
20
15
-30
-35
-40
-45
-50
-55
-60
-40
-45
-50
-55
-60
33
ACPR
10
5
0
35
37
39
41
43
45
47
49
33
35
37
39
41
43
45
47
49
Output Power (dBm)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1990 MHz
V
DD
= 30 V, I
DQ
= 1.85 A, P
O UT
= 110 W
20
19
65
60
55
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
50
45
40
35
30
25
20
15
1890
1920
1950
1980
2010
-15
Gain (dB)
18
17
16
15
14
38
40
42
44
46
48
50
52
54
45
35
Efficiency
-20
-25
Efficiency
25
15
5
IMD3
-30
-35
-40
Gain
-45
-50
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 15
Rev. 09, 2010-11-09
Return Loss (dB), IMD (dBc)
Gain (dB) / Efficiency (%)
Drain Efficiency (%)
Gain
RL
-5
-10
55
Drain Efficiency (%)
IMD & ACPR (dBc)
IMD (dBc)
FPGA/CPLD
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