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TSD10H100CWC0G

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2
产品类别分立半导体    二极管   
文件大小229KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
下载文档 详细参数 选型对比 全文预览

TSD10H100CWC0G概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2

TSD10H100CWC0G规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明D2PAK-3/2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.7 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流100 A
元件数量2
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压100 V
最大反向电流100 µA
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置SINGLE

文档预览

下载PDF文档
TSD10H100CW - TSD10H200CW
Taiwan Semiconductor
10A, 100V - 200V Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-263AB (D PAK)
2
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier is designed for high frequency
switched mode power supplies such as adapters, lighting, and
DC/DC converters.
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward
rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
Instantaneous forward
voltage per diode (Note1)
I
F
= 5A
I
F
= 5A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
I
R
R
θJC
T
J
T
STG
0.62
0.55
-
-
MAX
0.70
0.63
100
15
TYP
0.69
0.58
-
-
TSD10H
100CW
100
TSD10H
120CW
120
10
5
100
10000
MAX
0.79
0.66
100
15
3.2
- 55 to +150
- 55 to +150
TYP
0.78
0.64
-
1.5
MAX
0.88
0.72
100
10
TYP
0.81
0.67
-
1.5
MAX
0.91
0.75
100
10
V
μA
mA
°C/W
°C
°C
TSD10H
150CW
150
TSD10H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_D0000002
Version: A15

TSD10H100CWC0G相似产品对比

TSD10H100CWC0G TSD10H120CWC0G TSD10H100CW MNG TSD10H120CW MNG TSD10H150CW MNG TSD10H200CW MNG TSD10L200CW MNG TSD10H200CWC0G
描述 Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 120V V(RRM), Silicon, TO-263AB, D2PAK-3/2 DIODE, SCHOTTKY, TRENCH, 10A, 10 DIODE, SCHOTTKY, TRENCH, 10A, 12 DIODE, SCHOTTKY, TRENCH, 10A, 15 DIODE, SCHOTTKY, TRENCH, 10A, 20 DIODE, SCHOTTKY, TRENCH, 10A, 20 Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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