IRF1324S-7PPbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
24V
0.8mΩ
1.0mΩ
429A
240A
c
D
S
G
S
S
S
S
D
2
Pak 7 Pin
G
D
S
Gate
Standard Pack
Form
Tube
Tape and Reel Left
Quantity
50
800
Drain
Source
Base part number
IRF1324S-7PPbF
Package Type
D Pak-7Pin
2
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
d
f
429
303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ã
e
g
j
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
k
Parameter
2
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
Junction-to-Ambient (PCB Mount) , D Pak
1
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IRF1324S-7PPbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
24
–––
–––
2.0
–––
–––
–––
–––
–––
––– –––
0.023 –––
0.80 1.0
–––
4.0
–––
20
––– 250
––– 200
––– -200
3.0
–––
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 5mA
mΩ V
GS
= 10V, I
D
= 160A
V V
DS
= V
GS
, I
D
= 250μA
μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 19V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
Ω
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
180
47
58
122
19
240
86
93
7700
3380
1930
4780
4970
–––
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 50V, I
D
= 160A
I
D
= 75A
V
DS
=12V
V
GS
= 10V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
V
DD
= 16V
I
D
= 160A
R
G
=2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 19V
ƒ = 1.0MHz, See Fig.5
V
GS
= 0V, V
DS
= 0V to 19V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 19V
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Effective Output Capacitance (Energy Related) –––
–––
Effective Output Capacitance (Time Related)
g
ns
g
pF
g
h
i
hÃ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
––– 429
–––
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
A
A
Ãd
1636
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
p-n junction diode.
––– –––
1.3
V T
J
= 25°C, I
S
= 160A, V
GS
= 0V
V
R
= 20V,
–––
71
107
ns T
J
= 25°C
T
J
= 125°C
I
F
= 160A
–––
74
110
di/dt = 100A/μs
–––
83
120
nC T
J
= 25°C
T
J
= 125°C
–––
92
140
–––
2.0
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
Notes:
Calculated continuous current based on maximum allowable junction
I
SD
≤
160A, di/dt
≤
600A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
temperature. Package limitation current is 240A. Note that current
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
some lead mounting arrangements.(Refer
to AN-1140
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
http://www.irf.com/technical-info/appnotes/an-1140.pdf
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Repetitive rating; pulse width limited by max. junction
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
temperature.
mended footprint and soldering techniques refer to application note #AN-994.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.018mH
R
θ
is measured at T
J
approximately 90°C
R
G
= 25Ω, I
AS
= 160A, V
GS
=10V. Part not recommended for use
above this value.
2
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IRF1324S-7PPbF
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
100
4.5V
4.5V
10
0.1
1
≤60μs
PULSE WIDTH
Tj = 25°C
≤60μs
PULSE WIDTH
Tj = 175°C
10
100
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 160A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
TJ = 25°C
1
VDS = 15V
≤60μs
PULSE WIDTH
2
3
4
5
6
7
8
9
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
12.0
ID= 75A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 19V
VDS= 12V
10000
Ciss
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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IRF1324S-7PPbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
T J = 175°C
100
ID, Drain-to-Source Current (A)
1000
1msec
100μsec
100
10msec
T J = 25°C
10
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
DC
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
32
Id = 5mA
31
30
29
28
27
26
25
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
450
400
350
ID, Drain Current (A)
Limited By Package
300
250
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
1.4
1.2
1.0
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1000
900
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
ID
TOP
45A
80A
BOTTOM 160A
Energy (μJ)
0.8
0.6
0.4
0.2
0.0
-5
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
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2014 International Rectifier
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
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IRF1324S-7PPbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.02070
0.08624
0.24491
0.15005
0.000010
0.000070
0.001406
0.009080
τi
(sec)
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.05
0.10
10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Δ
Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
5
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April 08, 2014
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