V
RM
= 600 V, I
F(AV)
= 60 A, trr = 35 ns(max.)
Fast Recovery and High Power Diode
CTXS-6606S
Features
The CTXS-6606S is a high power diode of the
low-noise and low loss which realize a peak reverse
voltage of 600 V. Typical forward voltage drop of 1.45
V is realized by optimizing the relationship of trade-off
between V
F
and t
rr
. It has the characteristics suit for PFC
circuit of CCM.
The low thermal resistance package achieves high
performance in terms of heat dissipation.
V
RM
------------------------------------------------------ 600 V
V
F
------------------------------------ 1.7 V max. (I
F
= 30 A)
I
F(AV)
------------------------------------------------------- 60 A
t
rr
----------------------------------------------------35 ns max.
(I
F
= 500 mA, I
RP
= 500 mA, 90 % of R.P.)
Preliminary
Package
TO-247-3L
(4)
K
(1) (2) (3)
A K A
Applications
For PFC Circuit (CCM)
For Large Current Secondary Side Rectifier
For DC-DC Converter, etc.
Not to scale
Absolute Maximum Ratings
Parameter
Repetitive
Unless otherwise specified, T
A
is 25 °C
Symbol
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
Rating
600
60
100
50
−40 to 150
−40 to 150
Unit
V
A
A
A
2
s
°C
°C
10 ms
Half sinewave, one shot
1 ms
≤
t
≤10
ms
Notes
Peak
Reverse
Voltage
Average Forward Current
Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Electrical Characteristics
Parameter
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current
Under High Temperature
Reverse Recovery Time
Unless otherwise specified, T
A
is 25 °C
Symbol
V
F
I
R
H½I
R
t
rr
Test Conditions
I
F
= 30 A
V
R
= V
RM
V
R
= V
RM
, T
j
= 150
°C
I
F
= I
RP
= 500 mA,
T
j
= 25 °C,
90 % recovery point
Min.
―
―
―
―
Typ.
1.45
―
―
―
Max.
1.7
100
30
35
Unit
V
µA
mA
ns
°C/W
Thermal Resistance*
R
th(j-c)
―
―
1.5
* R
th(j-c)
is thermal resistance between junction and case. Case temperature (T
C
) is measured at the under of the screw
hole of case.
CTXS-6606S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en/
1
CTXS-6606S
Package Outline
TO-247-3L
SYMBOL
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
φ
P
Q
S
MIN
4.82
2.23
1.87
1.09
1.81
2.83
0.59
20.63
17.26
15.75
13.06
4.32
19.81
3.74
3.47
5.53
Preliminary
NOM
5.02
2.41
2.04
1.27
2.10
3.10
0.71
21.07
17.63
15.94
13.26
4.58
5.45 BSC
20.19
4.07
3.60
5.90
6.15 BSC
MAX
5.22
2.60
2.20
1.45
2.30
3.29
0.82
21.51
18.00
16.13
13.46
4.83
20.57
4.39
3.73
6.26
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
Marking Diagram
XS6606
YMDD#B
Part Number
Lot Number
Y is the Last digit of year (0 to 9)
M is the Month (1 to 9, O ,N or D)
DD is the Date (two digit of 01 to 31)
# is the last digit of wafer lot number
B expresses Pb free pins
(1)
(2)
(3)
CTXS-6606S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
5
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