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SB130HFAMP

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
产品类别分立半导体    二极管   
文件大小273KB,共4页
制造商Fagor Electrónica
下载文档 详细参数 全文预览

SB130HFAMP概述

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

SB130HFAMP规格参数

参数名称属性值
厂商名称Fagor Electrónica
包装说明O-PALF-W2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-204AL
JESD-30 代码O-PALF-W2
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
参考标准AEC-Q101
最大重复峰值反向电压30 V
表面贴装NO
技术SCHOTTKY
端子形式WIRE
端子位置AXIAL

文档预览

下载PDF文档
SB120 - SB1150
1.0 Amp. Schottky Barrier Rectifier
Voltage
20 V to 150 V
Current
1.0 A
DO-204AL (DO-41)
FEATURES
• Low power losses, high efficiency
• High surge current capability
• High frequency operation
• Guarding for overvoltage protection
• Low forward voltage drop
• Solder dip 260ºC, 10s
• AEC-Q101 qualified
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
• Halogen-free available according to IEC 61249-2-21
definition
MECHANICAL DATA
• Case
:
DO-204AL (DO-41). Epoxy meets UL 94V-0
flammability rating.
• Polarity
:
Color band denotes cathode end.
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test
TYPICAL APPLICATIONS
Used in low voltage high frequency inverters, freewheeling,
dc-to-dc converters, and polarity protection applications.
Maximum Ratings and Electrical Characteristics at 25 ºC
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
j
T
j
T
stg
SB
120
20
14
20
SB
130
30
21
30
SB
140
40
28
40
SB
150
50
35
50
1.0 A
SB
160
60
42
60
SB
190
90
63
90
SB
1100
100
70
100
SB
1150
150
105
150
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
(See graphic)
8.3 ms.Peak Forward Surge Current
(Jedec Method)
30 A
110 pF
-55 to +125 °C
80 pF
-55 to +150 °C
30 pF
Typical Junction Capacitance
Storage Temperature Range
(Note 2)
Operating Temperature Range
-55 to +150 °C
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-a)
NOTES:
Maximum Instantaneous Forward Voltage I
F
=1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance
Ta = 25 °C
Ta =125°C
(Note 1)
0.55 V
0.5 mA
15 mA
0.70 V
10 mA
90 °C/W
0.80 V
0.1 mA
3.0 mA
0.95 V
1. Mount on Cu-Pad Size 5mn x 5mm on P.C.B.
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
www.fagorelectronica.com
Document Name: sb1
Revision: 1
Version: Feb-15
Page Number: 1/4

 
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