DIGITRON SEMICONDUCTORS
MAC97,(A),(B) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +110°C, ½ sine wave 50 to 60Hz, gate open)
MAC97-1, MAC97A-1, MAC97B-1
MAC97-2, MAC97A-2, MAC97B-2
MAC97-3, MAC97A-3, MAC97B-3
MAC97-4, MAC97A-4, MAC97B-4
MAC97-5, MAC97A-5, MAC97B-5
MAC97-6, MAC97A-6, MAC97B-6
MAC97-7, MAC97A-7, MAC97B-7
MAC97-8, MAC97A-8, MAC97B-8
RMS on-state current
(full sine wave, 50 to 60Hz, T
C
= 50°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
C
= 110°C)
Circuit fusing considerations
(T
J
= -40 to +110°C, t = 8.3ms)
Peak gate voltage
(t
≤
2.0µs)
Peak gate power
(t
≤
2.0µs)
Average gate power
(T
C
= 80°C, t = 8.3ms)
Peak gate current
(t
≤
2.0µs)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
30
60
100
200
300
400
500
600
0.6
8.0
0.26
5.0
5.0
0.1
1.0
-40 to +110
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
V
GM
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Volts
Watts
Watts
Amps
°C
°C
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
Characteristic
Peak blocking current
(2)
(Rated V
DRM
@ T
J
= 110°C)
Peak on-state voltage
(either direction)
(I
TM
= 0.85A peak, pulse width
≤
2 ms, duty cycle
≤
2%)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
(V
D
= Rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+)
Holding current
(either direction)
(V
D
= 12V, gate open, I
T
= 200mA)
Symbol
I
DRM
V
TM
Min
-
-
Typ.
-
-
Max
0.1
1.9
Unit
mA
Volts
V
GT
-
-
-
-
0.1
0.1
-
-
-
-
-
-
-
2.0
2.0
2.0
2.5
-
-
10
Volts
I
H
-
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130205
DIGITRON SEMICONDUCTORS
MAC97,(A),(B) SERIES
Characteristic
Gate controlled turn on time
(V
D
= rated V
DRM
, I
TM
= 1.0A peak, I
G
= 25mA)
Critical rate of rise of commutation voltage
(V
D
= Rated V
DRM
, I
TM
= 0.84µA peak, commutating di/dt = 0.32A/ms, gate unenergized,
T
C
= 50°C)
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, exponential waveform, T
C
= 110°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
t
gt
Min
-
-
Typ.
2.0
5
Max
-
-
Unit
µs
dv/dt(c)
V/µs
dv/dt
-
25
-
V/µs
Note 2: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the
rated blocking voltage.
Quadrant and polarity
I
MT2(+), G(+)
II
MT2(+), G(-)
III
MT2(-), G(-)
IV
MT2(-), G(+)
MAC SERIES
97
10
10
10
10
97A
5.0
5.0
5.0
7.0
97B
3.0
3.0
3.0
5.0
Unit
mA
mA
mA
mA
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-92
Body painted, alpha-numeric
See below
TO-92
Inches
Min
Max
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
-
0.250
-
0.080
0.105
-
0.100
0.115
-
0.135
-
Millimeters
Min
Max
4.450
5.200
4.320
5.330
3.180
4.190
0.410
0.550
0.410
0.480
1.150
1.390
2.420
2.660
0.390
0.500
12.700
-
6.350
-
2.040
2.660
-
2.540
2.930
-
3.430
-
A
B
C
D
F
G
H
J
K
L
N
P
R
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130205
嵌入式系统
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