DIGITRON SEMICONDUCTORS
MAC800,(A),(B) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= 125°C)
MAC800-2, MAC800A-2, MAC800B-2
MAC800-5, MAC800A-5, MAC800B-5
MAC800-10, MAC800A-10, MAC800B-10
MAC800-20, MAC800A-20, MAC800B-20
MAC800-40, MAC800A-40, MAC800B-40
MAC800-60, MAC800A-60, MAC800B-60
MAC800-80, MAC800A-80, MAC800B-80
RMS on-state current
(full sine wave, 50 to 60Hz, T
C
= 95°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
J
= -40 to +125°C)
Circuit fusing considerations
(T
J
= -40 to +125°C, t = 8.3ms)
Peak gate power
(t
≤
10µs)
Average gate power
Peak gate voltage
(pulse width
≤
10µs)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
25
50
100
200
400
600
800
4.0
40
6.5
10
0.5
5.0
-40 to +125
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Volts
°C
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
* Soldering temperatures shall not exceed 200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
5.0
150
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(Rated V
DRM
@ T
J
= 125°C, gate open)
Peak on-state voltage
(either direction)
(I
TM
= 6.0A peak, pulse width
≤
300µs, duty cycle
≤
2%)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω, T
J
= 40°C, minimum gate pulse width = 8.3ms)
MT2(+),G(+); MT2(-),G(-), all types
MT2(+),G(-); MT2(-),G(+), MAC800A, B
(V
D
= Rated V
DRM
, R
L
= 10kΩ, T
J
= 125°C, minimum pulse width = 8.3ms)
MT2(+),G(+); MT2(-),G(-), all types
MT2(+),G(-); MT2(-),G(+), MAC800A, B
Holding current
(either direction)
(V
D
= 12V, gate open, initiating current
(V
D
= 12V, gate open, initiating current
(V
D
= 12V, gate open, initiating current
(V
D
= 12V, gate open, initiating current
=
=
=
=
1.0A,
1.0A,
1.0A,
1.0A,
T
J
T
J
T
J
T
J
=
=
=
=
-40°C) MAC800 Series
-40°C) MAC800A, B Series
25°C) MAC800 Series
25°C) MAC800A, B Series
Symbol
I
DRM
V
TM
Min
-
-
Typ.
0.5
-
Max
2.0
2.0
Unit
mA
Volts
V
GT
-
-
0.2
0.2
-
-
-
-
-
1.4
1.4
-
-
-
-
-
-
1.0
2.5
2.5
-
-
70
30
30
15
Volts
I
H
mA
Gate controlled turn on time
(V
D
= rated V
DRM
, I
TM
= 14A peak, I
GT
= 100mA)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
t
gt
2.0
µs
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130208
嵌入式系统
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