DIGITRON SEMICONDUCTORS
MAC6068C-MAC6075C
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= 110°C)
MAC6068C
MAC6069C
MAC6070C
MAC6071C
MAC6073C
MAC6074C
MAC6075C
RMS on-state current
(T
C
= 85°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
J
= -40 to +110°C)
Circuit fusing considerations
(T
J
= -40 to +110°C, t = 1.0 to 8.3ms)
Peak gate power
Average gate power
Operating junction temperature range
Storage temperature range
Mounting torque
(6-32 screw)
(2)
Symbol
Value
Unit
V
DRM
25
50
100
200
400
500
600
4.0
30
3.6
10
0.5
-40 to +110
-40 to +150
8.0
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
°C
°C
In. lb.
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2: Torque rating applies with use of torque washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case to sink thermal resistance. Main terminal 2 and
heatsink contact pad are common.
* Soldering temperatures shall not exceed 200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
3.5
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(Rated V
DRM
@ T
J
= 125°C, gate open)
Peak on-state voltage
(either direction)
(I
TM
= 6.0A peak)
Gate trigger voltage
(V
D
= 12V, R
L
= 100Ω, T
J
= -40°C)
MT2(+),G(+); MT2(-),G(-), all types
MT2(+),G(-); MT2(-),G(+), all types
(V
D
= Rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
MT2(+),G(+); MT2(-),G(-), all types
MT2(+),G(-); MT2(-),G(+), all types
Holding current
(either direction)
(V
D
= 12V, gate open, T
J
= -40°C, initiating current = 1A)
MAC6068C-MAC6075C
T
J
= 25°C
MAC6068C-MAC6075C
Symbol
I
DRM
V
TM
Min
-
-
Typ.
-
-
Max
2.0
2.0
Unit
mA
Volts
V
GT
-
-
0.2
0.2
1.4
1.4
-
-
2.5
2.5
-
-
Volts
I
H
-
-
-
-
30
15
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
DIGITRON SEMICONDUCTORS
MAC6068C-MAC6075C
Characteristic
Turn on time
(either direction)
(I
TM
= 14A peak, I
GT
= 100mA)
Blocking voltage application rate at commutation @ V
DRM
(T
J
= 85°C, gate open)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
t
on
dv/dt
Min
-
-
Typ.
1.5
5.0
Quadrant
Max
-
-
Unit
µs
V/µs
Characteristic
Peak gate trigger current
(Main terminal voltage = 12V, R
L
= 100Ω, T
J
= 25°C)
(Main terminal voltage = 12V, R
L
= 100Ω, T
J
= -40°C)
Symbol
I
mA
10
20
II
mA
10
20
III
mA
10
20
IV
mA
20
40
I
GTM
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-126
Body painted, alpha-numeric
See below
TO-126
Inches
Min
Max
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.125
0.091
0.097
0.050
0.095
0.015
0.025
0.595
0.655
3° TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
-
Millimeters
Min
Max
10.80
11.050
7.490
7.750
2.410
2.670
0.510
0.660
2.920
3.180
2.310
2.460
1.270
2.410
0.380
0.640
15.110
16.640
3° TYP
3.760
4.010
1.140
1.400
0.640
0.890
3.680
3.940
1.020
-
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
模拟与混合信号
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