Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
RMS on-state current
(full sine wave, 50 to 60Hz)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
C
= 110°C)
Circuit fusing considerations
(T
J
= -40 to +110°C, t = 8.3ms)
Peak gate voltage
(t
≤
2.0µs)
Peak gate power
(t
≤
2.0µs)
Peak gate current
(t
≤
2.0µs)
Average gate power
(T
C
= 80°C, t = 8.3ms)
Operating junction temperature range
Storage temperature range
Mounting torque
Peak repetitive forward voltage
MAC3010/MAC3030
MAC3020/MAC3040
Symbol
I
T(RMS)
I
TSM
I
2
t
V
GM
P
GM
I
GM
P
G(AV)
T
J
T
stg
-
V
DRM
6.0
250
400
8.0
250
400
-40 to
+100
Current Ratings
-4
4.0
30
3.6
±5
10
11
-8
8.0
80
26
±10
20
12
-15
15
150
90
±10
20
12
0.5
-40 to +125
-40 to +150
8.0
250
400
8.0
250
400
30
250
400
30
250
400
-40 to +100
-25
25
250
260
±10
20
12
-40
40
300
370
±10
20
12
-401
40
300
370
±10
20
12
Unit
Amps
Amps
A
2
s
Volts
Watts
Amps
Watts
°C
°C
In. lb.
Volts
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Current Ratings
-4
3.5
75
-8
2.2
60
-15
2.0
60
-25
1.2
60
-40
0.9
1.0
-401
0.9
1.0
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
-4 CURRENT RATING
Peak blocking current
(2)
(Rated V
DRM
@ T
J
= 110°C)
Peak on-state voltage
(either direction)
(I
TM
= 6A peak, pulse width
≤
2 ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(-),G(-)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(-),G(-)
(R
L
= 10kΩ, T
J
= 110°C)
MT2(+),G(+); MT2(-),G(-)
Holding current
(V
D
= 12V, I
TM
= 200mA, gate open)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
Min
Typ.
Max
Unit
I
DRM
V
TM
-
-
-
-
2.0
2.0
mA
Volts
I
GT
-
-
30
mA
V
GT
-
0.2
-
-
-
2.0
-
40
Volts
I
H
-
mA
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130205
DIGITRON SEMICONDUCTORS
MAC3010
MAC3020
MAC3030
MAC3040
SERIES
SERIES
SERIES
SERIES
Characteristic
Gate controlled turn on time
(I
TM
= 6A peak, I
G
= 100mA)
Critical rate of rise of commutation voltage
(I
TM
= 6A peak, commutating di/dt = 3.1A/ms, gate unenergized, T
C
= 85°C)
Critical rate of rise of off-state voltage
(exponential waveform, T
C
= 110°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
tgt
dv/dt(c)
dv/dt
Min
-
-
-
Typ.
1.5
5.0
20
Max
-
-
-
Unit
µs
V/µs
V/µs
Note 2: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the
rated blocking voltage.
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-126 (MAC3010-4)
Body painted, alpha-numeric
See below
TO-126
Inches
Min
Max
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.125
0.091
0.097
0.050
0.095
0.015
0.025
0.595
0.655
3° TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
-
Millimeters
Min
Max
10.80
11.050
7.490
7.750
2.410
2.670
0.510
0.660
2.920
3.180
2.310
2.460
1.270
2.410
0.380
0.640
15.110
16.640
3° TYP
3.760
4.010
1.140
1.400
0.640
0.890
3.680
3.940
1.020
-
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130205
DIGITRON SEMICONDUCTORS
MAC3010 SERIES
MAC3020 SERIES
MAC3030 SERIES
MAC3040 SERIES
Characteristic
-8, -15, -25 CURRENT RATING
Peak blocking current
(@ T
J
= 125°C)
(2)
SILICON BIDIRECTIONAL THYRISTORS
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Symbol
Min
Typ.
Max
Unit
I
DRM
-
-
2.0
mA
Peak on-state voltage
(I
TM
=
√2
I
T(RMS)
A peak, pulse width
≤
2 ms, duty cycle
≤
2%)
MAC3030-8
MAC3030-15
MAC3030-25
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(-),G(-)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(-),G(-)
(R
L
= 10kΩ, T
J
= 125°C)
MT2(+),G(+); MT2(-),G(-)
Holding current
(V
D
= 12V, I
TM
= 200mA, gate open)
Gate controlled turn on time
(I
TM
=
√2
I
T(RMS)
A peak, I
G
= 100mA)
Critical rate of rise of commutation voltage
(I
TM
=
√2
I
T(RMS)
A peak, commutating di/dt = 0.52 I
T(RMS)
A/ms
,
gate unenergized,
T
C
= 80°C)
Critical rate of rise of off-state voltage
(exponential waveform, T
C
= 125°C)
V
TM
-
-
-
-
-
-
1.6
1.6
1.85
Volts
I
GT
-
-
40
mA
V
GT
-
0.2
-
-
-
1.5
5.0
2.0
-
40
-
-
Volts
I
H
t
gt
-
-
-
mA
µs
dv/dt(c)
V/µs
dv/dt
40
-
-
V/µs
Note 2: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the
rated blocking voltage
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130205
DIGITRON SEMICONDUCTORS
MAC3010
MAC3020
MAC3030
MAC3040
SERIES
SERIES
SERIES
SERIES
SILICON BIDIRECTIONAL THYRISTORS
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB (MAC3010-8, -15, -25)
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130205
DIGITRON SEMICONDUCTORS
MAC3010
MAC3020
MAC3030
MAC3040
SERIES
SERIES
SERIES
SERIES
Characteristic
-40, -401 CURRENT RATING
Peak blocking current
(@ T
J
= 110°C)
(2)
SILICON BIDIRECTIONAL THYRISTORS
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Symbol
Min
Typ.
Max
Unit
I
DRM
V
TM
-
-
-
-
2.0
1.85
mA
Volts
Peak on-state voltage
(either direction)
(I
TM
= 56A peak, pulse width
≤
2 ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(-),G(-)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(-),G(-)
(R
L
= 10kΩ, T
J
= 110°C)
MT2(+),G(+); MT2(-),G(-)
Holding current
(V
D
= 12V, I
TM
= 200mA, gate open)
Gate controlled turn on time
(I
TM
= 56A peak, I
G
= 200mA)
Critical rate of rise of commutation voltage
(I
TM
= 56A peak, commutating di/dt = 22 A/ms
,
gate unenergized, T
C
= 60°C)
Critical rate of rise of off-state voltage
(exponential waveform, T
C
= 110°C)
I
GT
-
-
40
mA
V
GT
-
0.2
-
-
-
1.5
-
-
2.0
-
50
-
-
-
Volts
I
H
t
gt
dv/dt(c)
dv/dt
-
-
5.0
30
mA
µs
V/µs
V/µs
Note 2: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the
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