DIGITRON SEMICONDUCTORS
MAC229(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +110°C, ½ sine wave, 50 to 60Hz, gate open)
MAC229-4, MAC229A-4
MAC229-6, MAC229A-6
MAC229-8, MAC229A-8
MAC229-10, MAC229A-10
RMS on-state current
(Full cycle sine wave, 50 to 60Hz, T
C
= 80°C)
Peak non-repetitive surge current
(1 cycle, 60Hz, T
J
= 110°C)
Circuit fusing considerations
(t = 8.3ms)
Peak gate current
(t
≤
2µs)
Peak gate voltage
(t
≤
2µs)
Peak gate power
(t
≤
2µs)
Average gate power
(T
C
= 80°C, t
≤
8.3ms)
Operating junction temperature range
Storage temperature range
Mounting torque
Symbol
Value
Unit
V
DRM
200
400
600
800
8
80
26
±2
±10
20
0.5
-40 to +110
-40 to +150
8
Volts
I
T(RMS)
I
TSM
I
2
t
I
GM
V
GM
P
GM
P
G(AV)
T
J
T
stg
Amps
Amps
A
2
s
Amps
Volts
Watts
Watts
°C
°C
In. lb.
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are
exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
2.2
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted)
Characteristic
Peak blocking current
(2)
(V
D
= Rated V
DRM
, gate open, T
J
= 25°C)
(V
D
= Rated V
DRM
, gate open, T
J
= 110°C)
Peak on-state voltage
(I
TM
= 11A peak, pulse width
≤
2ms, duty cycle
≤
2%.)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(V
D
= Rated V
DRM
, R
L
= 10kΩ, T
C
= 110°C)
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-), all types
MT2(-),G(+) “A” suffix only
Holding current
(V
D
= 12V, I
TM
= 200mA, gate open)
Gate controlled turn-on time
(V
D
= Rated V
DRM
, I
TM
= 16A, I
G
= 30mA)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
Min
-
-
-
Typ.
-
-
-
Max
10
2
1.8
Unit
µA
mA
Volts
V
TM
I
GT
-
-
-
-
10
15
mA
V
GT
-
-
0.2
0.2
-
-
-
-
-
1.5
2.0
2.5
-
-
15
-
Volts
I
H
t
gt
-
-
mA
µs
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
DIGITRON SEMICONDUCTORS
MAC229(A) SERIES
Characteristic
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, exponential waveform, T
C
= 110°C)
Critical rate of rise of commutation voltage
(V
D
= Rated V
DRM,
I
TM
= 11.3A peak, commutating di/dt = 4.1A/ms, gate unenergized,
T
C
= 80°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
dv/dt
Min
-
Typ.
25
Max
-
Unit
V/µs
dv/dt(c)
-
5
-
V/µs
Note 2: Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltages such that the voltage applied exceeds the rated
blocking voltage.
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB
Alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130213
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