DIGITRON SEMICONDUCTORS
MAC218(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak repetitive off-state voltage
(1)
(T
J
= 25 to +125°C, gate open)
MAC218-4, MAC218A-4
MAC218-5, MAC218A-5
MAC218-6, MAC218A-6
MAC218-7, MAC218A-7
MAC218-8, MAC218A-8
MAC218-9, MAC218A-9
MAC218-10, MAC218A-10
RMS on-state current
(conduction angles = 360°, T
C
= 80°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
C
= 80°C, preceded and followed by rated current)
Circuit fusing considerations
(t = 8.3ms)
Peak gate power
(T
C
= 80°C, pulse width = 2µs)
Average gate power
(T
C
= 80°C, t = 8.3ms)
Peak gate trigger current
(pulse width = 1µs)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
200
300
400
500
600
700
800
8
100
40
16
0.35
4
-40 to +125
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GTM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(V
D
= Rated V
DRM
, gate open @ T
J
= 25°C)
(V
D
= Rated V
DRM,
gate open @ T
J
= 125°C)
Peak on-state voltage
(either direction)
(I
TM
= 11.3A peak, pulse width = 1 to 2 ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 12Ω)
Trigger Mode
MT2(+),G(+); MT2(+),G(-); MT2(-),G(-)
MT2(-),G(+) “A” suffix only
Gate trigger voltage
(continuous dc)
(main terminal voltage = 12V, R
L
= 100Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(main terminal voltage= Rated V
DRM
, R
L
= 10kΩ, T
J
= 125°C)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+) “A” suffix only
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
Min
-
-
-
Typ.
-
-
1.7
Max
10
2
2.0
Unit
µA
mA
Volts
V
TM
I
GT
-
-
-
-
50
75
mA
V
GT
-
-
-
-
0.2
0.2
0.9
0.9
1.1
1.4
-
-
2
2
2
2.5
-
-
Volts
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
DIGITRON SEMICONDUCTORS
MAC218(A) SERIES
Characteristic
Holding current
(either direction)
(V
D
= 24V, gate open, initiating current = 200mA)
Critical rate of rise of commutating off-state voltage
(V
D
= Rated V
DRM
, I
TM
= 11.3A, commutating di/dt = 4.1A/ms, gate unenergized,
T
C
= 80°C)
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, exponential voltage rise, gate open, T
J
= 125°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
I
H
Min
-
-
Typ.
-
5
Max
50
-
Unit
mA
dv/dt(c)
V/µs
dv/dt
-
100
-
V/µs
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
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