DIGITRON SEMICONDUCTORS
MAC210(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS T
C
= 25°C unless otherwise noted
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +125°C, ½ sine wave, 50 to 60Hz, gate open)
MAC210-4, MAC210A-4
MAC210-5, MAC120A-5
MAC210-6, MAC210A-6
MAC210-7, MAC210A-7
MAC210-8, MAC210A-8
MAC210-9, MAC210A-9
MAC210-10, MAC210A-10
RMS on-state current
(full sine wave, 50 to 60Hz, T
C
= 70°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
C
= 70°C, preceded and followed by rated current)
Circuit fusing considerations
(t = 8.3ms)
Peak gate power
(T
C
= 70°C, pulse width = 10µs)
Average gate power
(T
C
= 70°C, t = 8.3ms)
Peak gate current
(T
C
= 70°C, pulse width = 10µs)
Operating junction and storage temperature range
Symbol
Value
Unit
V
DRM
200
300
400
500
600
700
800
10
100
40
20
0.35
2.0
-40 to +125
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J,
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
Note 1: V
DRM
for all types can be applied on a continuous basis. Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
2.2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(Rated V
DRM
@ T
J
= 25°C)
(Rated V
DRM
@ T
J
= 125°C)
Peak on-state voltage
(either direction)
(I
TM
= 14A peak, pulse width = 1 to 2 ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(main terminal voltage = 12V, R
L
= 100Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+) “A” suffix only
Gate trigger voltage
(continuous dc)
(main terminal voltage = 12V, R
L
= 100Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+) “A” suffix only
(main terminal voltage= Rated V
DRM
, R
L
= 10kΩ, T
J
= 125°C)
MT2(+), G(+); MT2(-), G(-); MT2(+), G(-)
MT2(-), G(+) “A” suffix only
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
Min
-
-
-
Typ.
-
-
1.2
Max
10
2
1.65
Unit
µA
mA
Volts
V
TM
I
GT
-
-
-
-
12
12
20
35
50
50
50
75
mA
V
GT
-
-
-
-
0.2
0.2
0.9
0.9
1.1
1.4
-
-
2
2
2
2.5
-
-
Volts
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
DIGITRON SEMICONDUCTORS
MAC210(A) SERIES
Characteristic
Holding current
(either direction)
(main terminal voltage= 12V, gate open, initiating current = 500mA, T
C
= 25°C)
Turn on time
(Rated V
DRM
, I
TM
= 14A, I
GT
= 120mA, rise time = 0.1µs, pulse width = 2µs)
Critical rate of rise of commutation voltage
(V
D
= Rated V
DRM
, I
TM
= 14A, commutating di/dt = 5.0A/ms, gate unenergized,
T
C
= 70°C)
Critical rate of rise of off-state voltage
(V
D
= Rated V
DRM
, exponential voltage rise, gate open, T
C
= 70°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
I
H
t
gt
Min
-
-
-
Typ.
6
1.5
5
Max
50
-
-
Unit
mA
µs
dv/dt(c)
V/µs
dv/dt
-
100
-
V/µs
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130131
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
