IRFR7440PbF
IRFU7440PbF
HEXFET
®
Power MOSFET
Applications
l
Brushed Motor drive applications
l
BLDC Motor drive applications
l
PWM Inverterized topologies
l
Battery powered circuits
l
Half-bridge and full-bridge topologies
l
Electronic ballast applications
l
Synchronous rectifier applications
l
Resonant mode power supplies
l
OR-ing and redundant power switches
l
DC/DC and AC/DC converters
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dv/dt and dI/dt Capability
l
Lead-Free
l
RoHS Compliant containing no Lead, no Bromide,
and no Halogen
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
40V
1.9mΩ
2.4mΩ
180A
90A
c
S
G
G
D
S
D-Pak
IRFR7440TRPbF
I-Pak
IRFU7440TRPbF
G
D
S
Gate
Drain
Source
Ordering Information
Orderable part number
IRFR7440PbF
IRFR7440TRPbF
IRFU7440PbF
Package Type
D-PAK
D-PAK
I-PAK
Standard Pack
Form
Quantity
Tube/Bulk
75
Tape and Reel
2000
Tube/Bulk
75
Complete Part Number
IRFR7440PbF
IRFR7440TRPbF
IRFU7440PbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
8
180
ID = 90A
ID, Drain Current (A)
6
160
140
120
100
80
60
40
LIMITED BY PACKAGE
4
TJ = 125°C
2
TJ = 25°C
0
4
8
12
16
20
20
0
25
50
75
100
125
150
175
VGS, Gate-to-Source Voltage (V)
TC, Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
www.irf.com
©
2012 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
October 17, 2012
IRFR/U7440PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Single Pulse Avalanche Energy
Max.
180
125
90
760
140
c
c
Units
A
d
W
W/°C
V
V/ns
°C
f
0.95
± 20
4.4
-55 to + 175
300
Avalanche Characteristics
E
AS (Thermally limited)
E
AS
(tested)
I
AR
E
AR
e
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
l
160
220
See Fig 15,16, 23a, 23b
mJ
A
mJ
d
Thermal Resistance
Symbol
R
8
JC
R
8
JA
R
8
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
k
Parameter
Typ.
Max.
1.05
50
110
Units
°C/W
Junction-to-Ambient
k
j
–––
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
40
–––
–––
2.2
–––
–––
–––
–––
–––
–––
28
1.9
2.8
3.0
–––
–––
–––
–––
2.6
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
–––
V V
GS
= 0V, I
D
= 250μA
––– mV/°C Reference to 25°C, I
D
= 1mA
2.4
mΩ V
GS
= 10V, I
D
= 90A
–––
mΩ V
GS
= 6.0V, I
D
= 50A
3.9
V V
DS
= V
GS
, I
D
= 100μA
1
μA
V
DS
= 40V, V
GS
= 0V
150
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
100
nA V
GS
= 20V
-100
V
GS
= -20V
Ω
–––
Ãd
g
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 90A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.04mH
R
G
= 50Ω, I
AS
= 90A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1306A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
This value determined from sample failure population,
starting T
J
= 25°C, L= 0.04mH, R
G
= 50Ω, I
AS
= 90A, V
GS
=10V.
2
www.irf.com
©
2012 International Rectifier
October 17, 2012
IRFR/U7440PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
280
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
89
26
26
63
11
39
51
34
4610
690
460
855
1210
–––
134
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 10V, I
D
= 90A
I
D
=90A
V
DS
=20V
V
GS
= 10V
I
D
= 90A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
See Fig. 12
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Ãg
ns
pF
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
34
35
33
34
1.8
180
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
A
A
Ãd
760
1.3
–––
–––
–––
–––
–––
p-n junction diode.
V T
J
= 25°C, I
S
= 90A, V
GS
= 0V
ns T
J
= 25°C
V
R
= 34V,
I
F
= 90A
T
J
= 125°C
di/dt = 100A/μs
nC T
J
= 25°C
T
J
= 125°C
A T
J
= 25°C
g
3
www.irf.com
©
2012 International Rectifier
October 17, 2012
IRFR/U7440PbF
1000
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
TOP
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.3V
TOP
100
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.3V
10
10
4.3V
1
4.3V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
≤
60μs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
2.0
Fig 4.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 90A
VGS = 10V
1.5
100
TJ = 175°C
10
TJ = 25°C
1
1.0
VDS = 10V
≤
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Fig 6.
Normalized On-Resistance vs. Temperature
16
ID= 90A
12
VDS = 32V
VDS = 20V
Ciss
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
8
1000
Coss
Crss
4
100
1
10
100
0
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
www.irf.com
©
2012 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
October 17, 2012
IRFR/U7440PbF
1000
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100μsec
100
1msec
L
imited by Package
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
TJ = 175°C
10
TJ = 25°C
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
DC
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
49
48
47
46
Id = 1.0mA
Fig 10.
Maximum Safe Operating Area
0.7
0.6
0.5
Energy (μJ)
45
44
43
42
41
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
0.4
0.3
0.2
0.1
0.0
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
(
RDS(on), Drain-to -Source On Resistance m
Ω)
Fig 12.
Typical C
OSS
Stored Energy
10.0
VGS = 5.5V
VGS = 7.0V
6.0
8.0
VGS = 6.0V
VGS = 8.0V
VGS =10V
4.0
2.0
0.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
www.irf.com
©
2012 International Rectifier
October 17, 2012
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
