DIGITRON SEMICONDUCTORS
GA200-GA201A
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Repetitive peak off state voltage
Repetitive peak on state current
DC on state current
70°C ambient
70°C case
Peak gate current
Average gate current
Reverse gate current
Reverse gate voltage
Thermal resistance
Storage temperature range
Operating temperature range
Symbol
V
DRM
I
TRM
I
T
I
GM
I
G(AV)
I
GR
V
GR
R
ӨCA
T
stg
T
J
200mA
400mA
250mA
25mA
3mA
5V
300°C/W
-65° to 200°C
-65° to 150°C
GA200
GA200A
60V
GA201
GA201A
100V
Up to 100A
-
6A
250mA
50mA
3mA
5V
GB200
GB200A
60V
GB201
GB201A
100V
ELECTRICAL CHARACTERISTICS
(@ 25°C unless otherwise noted)
Test
Delay time
Rise time (GA200, GA200A, GB200, GB200A)
Rise time (GA201, GA201A, GB201, GB201A)
Gate trigger on pulse width
Circuit commutated turn-off time
(GA200, GA201, GB200, GB201)
(GA200A, GA201A, GB200A, GB201A)
Off-state current
Reverse current
Reverse gate current
Gate trigger current
Gate trigger voltage
On-state voltage
Holding current
Off-state voltage - critical rate of rise
Symbol
t
d
t
r
t
r
t
pg(on)
t
q
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.10
-
0.3
0.05
20
Typ.
20
10
15
25
10
20
0.02
0.8
0.3
0.01
20
1.0
0.01
10
0.6
0.20
1.1
2.0
0.2
40
Max.
30
-
25
-
20
-
0.05
2.0
0.5
0.1
100
10
0.1
200
0.75
-
1.5
5.0
-
-
Units
ns
ns
ns
µs
µs
µA
µA
mA
mA
µA
V
V
V
mA
mA
V/µS
Test Conditions
I
G
= 20mA, I
T
= 1A
I
G
= 30mA, I
T
= 1A
V
D
= 60V, I
T
= 1A(1)
V
D
= 60V, I
T
= 30A(1)
V
D
= 100V, I
T
= 1A(1)
V
D
= 100V, I
T
= 30A(1)
I
G
= 10mA, I
T
= 1A
I
T
= 1A, I
R
= 1A, R
GK
= 1K
V
DRM
= Rating, R
GK
= 1K
V
DRM
= rating, R
GK
= 1K, 150°C
V
RRM
= 30V, R
GK
= 1K(2)
V
GRM
= 5V
V
D
= 5V, R
GS
= 10K
V
D
= 5V, R
GS
= 100Ω, T = 25°C
T = 150°C
I
T
= 2A
V
D
= 5V, R
GK
= 1K, T = 25°C
T = 150°C
V
D
= 30V, R
GK
= 1K
I
DRM
I
RRM
I
GR
I
GT
V
GT
V
T
I
H
dv/dt
Note 1: I
G
= 10mA, Pulse test: Duty cycle < 1%.
Note 2: Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120117
DIGITRON SEMICONDUCTORS
GA200-GA201A
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING
SWITCHING SPEED (TYPICAL) GA/GB200 SERIES
NOTES:
1.
2.
3.
4.
V
D
= Rated V
DRM
T
A
= 25°C
I
G
= 20mA
t
d
= 20ns, typically for all types independent of anode current
ON-STATE CURRENT VS. VOLTAGE
(GA/GB200 SERIES)
PEAK CURRENT VS. PULSE WIDTH
(GA200 SERIES)
1. Data based on on-state voltage graph at
T
J
= 150°C. Blocking voltage may be applied
immediately after termination of current pulse
2. T
A
= 75°C
SURGE RATING MAXIMUM
(GA/GB200 SERIES)
PEAK CURRENT VS. PULSE WIDTH
(GB200 SERIES)
NOTES:
1. Data based on on-state voltage graph at
T
J
= 150°C. Blocking voltage may be applied
immediately after termination of current pulse.
2. T
C
= 75°C
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
PEAK CURRENT VS. PULSE WIDTH
(GB200 SERIES)
1. Data based on on-state voltage graph at T
J
= 150°C.
Blocking voltage may be applied immediately after
termination of current pulse
2. T
A
= 75°C
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120117
DIGITRON SEMICONDUCTORS
GA200-GA201A
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING
ON-STATE CURRENT VS. VOLTAGE
(GA/GB200 SERIES)
NOTES:
SURGE RATING MAXIMUM
(GA/GB200 SERIES)
1.Blocking voltage may not be applied for
0.001 seconds after termination of surge
pulse as junction temperature will exceed
150°.
2. T
C
= 75°C
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120117
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