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BTC05-100B

产品描述SILICON BIDIRECTIONAL THYRISTORS
文件大小394KB,共4页
制造商Digitron
官网地址http://www.digitroncorp.com
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BTC05-100B概述

SILICON BIDIRECTIONAL THYRISTORS

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DIGITRON SEMICONDUCTORS
BTC05-()A SERIES
BTC05-()B SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= 110°C)
BTC05-50A,B
BTC05-100A,B
BTC05-200A,B
BTC05-400A,B
BTC05-600A,B
RMS on-state current
(T
C
= 80°C)
Peak non-repetitive surge current
(1 cycle, 60 Hz, T
J
= -40 to 110°C)
Circuit fusing considerations
(T
J
= -40 to 110°C , t = 10ms)
Peak gate power
Average gate power
Peak gate voltage
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
50
100
200
400
600
5
30
4.5
10
0.5
5.0
-40 to +110
-40 to +150
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Volts
°C
°C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2: Soldering temperatures shall not exceed +200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
3
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(Rated V
DRM
@ T
J
= 110°C, gate open)
Peak on-state voltage
(either direction)
(I
TM
= 5.0A peak)
Peak gate trigger voltage
(main terminal voltage = 12V, R
L
= 100Ω)
MT2(+), G(+); MT2(+), G(-); MT2(-), G(-)
MT2(-), G(+)
(main terminal voltage = rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
All quadrants
Holding current
(either direction)
(main terminal voltage= 12V, gate open, initiating current = 1.0A, T
J
= 25°C)
BTC05-()A SERIES
BTC05-()B SERIES
Turn on time
(either direction)
(I
TM
= 14A, I
GT
= 100mA)
Blocking voltage application rate at commutation
(@ V
DRM
, gate open)
Symbol
I
DRM
V
TM
Min
-
-
Typ.
-
-
Max
2.0
1.8
Unit
mA
Volts
V
GTM
-
-
0.2
-
-
-
2.2
2.5
-
Volts
I
H
-
-
-
-
-
-
1.5
50
10
5.0
-
-
mA
t
on
dv/dt
µs
V/µs
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204

 
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