DIGITRON SEMICONDUCTORS
BT162 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(T
J
= -40 to 110°C, half sine wave, 50 to 60Hz, gate open)
BT162-400
BT162-600
Non-repetitive peak off-state voltage
(T
J
= -40 to +110°C, t
≤
10ms, gate open)
BT162-400
BT162-600
RMS on-state current
(full cycle sine wave 50 to 60Hz)
(T
C
= 80°C)
(T
C
= 95°C)
Peak surge current
(1 cycle, T
C
= 80°C,preceded and followed by rated current)
60Hz
50Hz
Rate of rise of on-state current
(gate open, non-repetitive)
Circuit fusing considerations
(T
J
= -40 to 110°C , t = 1.0 to 10ms)
Peak gate voltage
Peak gate current
Peak gate power
(T
C
= 80°C, pulse width = 2.0µs)
Average gate power
(T
C
= 80°C, t = 10ms)
Operating junction temperature range
Storage temperature range
Symbol
Value
Unit
V
DRM
400
600
Volts
V
DSM
500
700
Volts
I
T(RMS)
12.0
6.0
Amps
I
TSM
120
110
10
40
10
2.0
20
0.5
-40 to +110
-40 to +150
Amps
di
T
/dt
I
2
t
V
GM
I
GM
P
GM
P
G(AV)
T
J
T
stg
A/µs
A
2
s
Volts
Amps
Watts
Watts
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
R
ӨJC
Maximum
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak blocking current
(either direction)
(Rated V
DRM
@ T
J
= 110°C, gate open)
Peak on-state voltage
(either direction)
(I
TM
= 17A peak, pulse width = 1 to 2ms, duty cycle
≤
2%)
Gate trigger current
(continuous dc)
(main terminal voltage = 12V, R
L
= 100Ω, minimum gate pulse width = 2.0µs)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(-); MT2(-), G(-), T
C
= -40°C
Gate trigger voltage
(continuous dc)
(main terminal voltage = 12V, R
L
= 100Ω, minimum gate pulse width = 2.0µs)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(-); MT2(-), G(-), T
C
= -40°C
(main terminal voltage = rated V
DRM
, R
L
= 10kΩ, T
J
= 110°C)
MT2(+), G(-); MT2(-), G(-)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
I
DRM
V
TM
Min
-
-
Typ.
-
1.3
Max
2.0
1.75
Unit
mA
Volts
I
GT
-
-
-
25
20
-
40
40
75
mA
V
GT
-
-
-
0.2
0.9
1.1
-
-
1.5
1.5
2.0
-
Volts
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204
DIGITRON SEMICONDUCTORS
BT162 SERIES
Characteristic
Holding current
(either direction)
(main terminal voltage= 12V, gate open, initiating current = 200mA)
T
C
= 25°C
T
C
= -40°C
Latching current
(main terminal voltage = 12V, R
L
= variable, gate pulse width = 20µs, duty cycle
≤
2%)
MT2(+), G(-) @ I
GT
= 40mA
MT2(-), G(-) @ I
GT
= 40mA
MT2(+), G(-) @ I
GT
= 75mA, T
C
= -40°C
MT2(-), G(-) @ I
GT
= 75mA, T
C
= -40°C
Critical rate of rise of off-state voltage
(Rated V
DRM
, exponential voltage rise, gate open, T
C
= 110°C)
SILICON BIDIRECTIONAL THYRISTORS
Symbol
Min
Typ.
Max
Unit
I
H
-
-
6.0
-
30
50
mA
I
L
-
-
-
-
-
30
6.0
-
-
100
60
40
100
60
-
mA
dv/dt
V/µs
Note 1: Off state voltage up to 800V may be applied, but triac may switch into the on-state. In that case, the rate of rise of on-state current should not exceed its specified
maximum rating.
MECHANICAL CHARACTERISTIC
Case
Marking
Pin out
TO-220AB
Body painted, alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204
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