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BRY55

产品描述SILICON CONTROLLED RECTIFIER
文件大小150KB,共2页
制造商Digitron
官网地址http://www.digitroncorp.com
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BRY55概述

SILICON CONTROLLED RECTIFIER

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DIGITRON SEMICONDUCTORS
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
(1)
(R
GK
= 1000Ω, T
J
= 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
Forward current RMS
(all conduction angles)
Peak forward surge current,
T
A
= 25°C
(1/2 cycle, sine wave, 60Hz)
Circuit fusing considerations,
T
A
= 25°C
(t = 8.3ms)
Forward peak gate power,
T
A
= 25°C
Forward peak gate current
, T
A
= 25°C (300µs, 120 PPS)
Operating junction temperature range
@ rated V
RRM
and V
DRM
Storage temperature range
Lead solder temperature
(<1.5mm from case, 10s max)
Symbol
Value
Unit
V
RRM
, V
DRM
30
60
100
200
400
500
600
0.8
8
0.15
0.1
1
-40 to +125
-40 to +150
+230
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
I
GFM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Amps
°C
°C
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
25°C, R
GK
= 1000Ω unless otherwise noted)
Characteristic
Peak forward blocking current
(V
D
= rated V
DRM
@ T
C
= 125°C)
Peak reverse blocking current
(V
R
= rated V
RRM
@ T
C
= 125°C)
Forward “on” voltage
(2)
I
TM
= 1A peak @ T
A
= 25°C)
Gate trigger current (continuous dc)
(3)
(Anode voltage = 7Vdc, R
L
= 100
Ω)
Gate trigger voltage (continuous dc)
(Anode voltage = 7Vdc, R
L
= 100
Ω)
(Anode voltage = rated V
DRM
, R
L
= 100
Ω)
T
C
= 25°C
T
C
= -40°C
T
C
= 125°C
Holding current
(Anode voltage = 7Vdc, initiating current = 20mA)
T
C
= 25°C
T
C
= -40°C
Note 2: Forward current applied for 1ms maximum duration, duty cycle
1%.
Note 3: R
GK
current is not included in measurement.
Symbol
I
DRM
I
RRM
V
TM
I
GT
Min.
-
-
-
-
Max.
100
100
1.7
200
Unit
µA
µA
Volts
µA
V
GT
-
-
0.1
0.8
1.2
-
Volts
I
H
-
-
5
10
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130117

 
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