DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BF862
N-channel junction FET
Product specification
Supersedes data of 1999 Jun 29
2000 Jan 05
Philips Semiconductors
Product specification
N-channel junction FET
FEATURES
•
High transition frequency for excellent sensitivity in
AM car radios
•
High transfer admittance.
APPLICATIONS
•
Pre-amplifiers in AM car radios.
handbook, halfpage
2
BF862
PINNING SOT23
PIN
1
2
3
source
drain
gate
DESCRIPTION
1
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package. Drain and source are
interchangeable.
3
Top view
Marking code:
2Ap.
MAM036
g
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSoff
I
DSS
P
tot
y
fs
T
j
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
T
s
≤
90
°C
CONDITIONS
MIN.
−
−0.3
10
−
35
−
TYP.
−
−0.8
−
−
45
−
MAX.
20
−1.2
25
300
−
150
UNIT
V
V
mA
mW
mS
°C
2000 Jan 05
2
Philips Semiconductors
Product specification
N-channel junction FET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
DG
V
GS
I
DS
I
G
P
tot
T
stg
T
j
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. Soldering point of the gate lead.
PARAMETER
thermal resistance from junction to soldering
point
CONDITIONS
note 1
VALUE
200
PARAMETER
drain-source voltage
drain-gate voltage
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
T
s
≤
90
°C;
note 1
CONDITIONS
MIN.
−
−
−
−
−
−
−65
−
BF862
MAX.
20
20
−20
40
10
300
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
UNIT
K/W
handbook, halfpage
400
MCD808
Ptot
(mW)
300
200
100
0
0
40
80
120
Ts (°C)
160
Fig.2 Power derating curve.
2000 Jan 05
3
Philips Semiconductors
Product specification
N-channel junction FET
STATIC CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
(BR)GSS
V
GS
V
GSoff
I
GSS
I
DSS
PARAMETER
gate-source breakdown voltage
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
drain-source current
CONDITIONS
I
GS
=
−1 µA;
V
DS
= 0
V
DS
= 0; I
G
= 1 mA
V
DS
= 8 V; I
D
= 1
µA
V
GS
=
−15
V; V
DS
= 0
V
GS
= 0; V
DS
= 8 V
−
−0.3
−
10
MIN.
−20
−
−
−0.8
−
−
TYP.
BF862
MAX.
−
1
−1.2
−1
25
UNIT
V
V
V
nA
mA
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
°C;
V
GS
= 0; V
DS
= 8 V; unless otherwise specified.
SYMBOL
y
fs
g
os
C
iss
C
rss
e
n
f
T
PARAMETER
common source forward transfer
admittance
common source output conductance
input capacitance
reverse transfer capacitance
equivalent noise input voltage
transition frequency
CONDITIONS
T
j
= 25
°C
T
j
= 25
°C
f = 1 MHz
f = 1 MHz
f = 100 kHz
MIN.
35
−
−
−
−
−
TYP.
45
180
10
1.9
0.8
715
MAX.
−
400
−
−
−
−
UNIT
mS
µS
pF
pF
nV/√Hz
MHz
2000 Jan 05
4
Philips Semiconductors
Product specification
N-channel junction FET
BF862
handbook, halfpage
40
MCD809
handbook, halfpage
300
MCD810
IDSS
(mA)
30
gos
(µS)
200
20
100
10
0
0
−0.5
−1
VGSoff (V)
−1.5
0
0
10
20
IDSS (mA)
30
V
DS
= 8 V; T
j
= 25
°C.
V
DS
= 8 V; T
j
= 25
°C.
Fig.4
Fig.3
Drain saturation current as a function of
gate-source cut-off voltage; typical values.
Common-source output conductance as a
function of drain saturation current;
typical values.
handbook, halfpage
60
MCD811
handbook, halfpage
60
MCD812
yfs
(mS)
50
yfs
(mS)
40
40
20
30
20
0
10
20
IDSS (mA)
30
0
0
10
20
ID (mA)
30
V
DS
= 8 V; T
j
= 25
°C.
V
DS
= 8 V; T
j
= 25
°C.
Fig.5
Forward transfer admittance as a function
of drain saturation current; typical values.
Fig.6
Forward transfer admittance as a function
of drain current; typical values.
2000 Jan 05
5
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