Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
9.0
7.0
0.4
0.15
MAX.
1500
800
14
30
125
3.0
-
-
0.55
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
≤
25 ˚C
I
C
= 9.0 A; I
B
= 2.25 A
f = 16 kHz
f = 70 kHz
I
Csat
= 9.0 A;f = 16 kHz
I
Csat
= 7.0 A;f = 70 kHz
PINNING - SOT429
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
45
MAX.
1
-
UNIT
K/W
K/W
1
Turn-off current.
May 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 6.0 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 9.0 A; V
CE
= 5 V
MIN.
-
-
-
7.5
800
-
0.96
-
4.2
TYP.
-
-
-
13.5
-
-
1.01
12
5.8
MAX.
1.0
2.0
100
-
-
3.0
1.06
-
7.6
UNIT
mA
mA
µA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
I
Csat
= 7.0 A;I
B1
= 1.4 A
(I
B2
= -4.5 A)
2
0.15
-
-
µs
µs
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 9.0 A;I
B1
= 1.8 A
(I
B2
= -4.5 A)
3.7
0.4
4.5
0.55
µs
µs
TYP.
145
MAX.
-
UNIT
pF
IC / mA
+ 50v
100-200R
250
Horizontal
Oscilloscope
Vertical
100R
6V
30-60 Hz
1R
200
100
0
VCE / V
min
VCEOsust
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
2
Measured with half sine-wave voltage (curve tracer).
May 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
TRANSISTOR
IC
DIODE
ICsat
100
hFE
BU4525 1V
VCE = 1V
t
Tmb = 25 C
Tmb = 85 C
IB
IB1
t
20us
26us
64us
IB2
10
VCE
1
0.01
0.1
1
10
100
t
IC / A
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
ICsat
90 %
IC
100
hFE
BU4525 5V
VCE = 5V
Tmb = 25 C
Tmb = 85 C
10 %
tf
ts
IB
IB1
t
10
t
1
0.01
0.1
1
10
100
- IB2
IC / A
Fig.4. Switching times definitions.
Fig.7. High and low DC current gain.
+ 150 v nominal
adjust for ICsat
VCEsat / V
10
Ths = 25 C
Ths = 85 C
BU4525AF/X/W
Lc
1
IBend
LB
T.U.T.
Cfb
0.1
IC/IB = 5
-VBB
0.01
0.1
1
10
IC / A
100
Fig.5. Switching times test circuit.
Fig.8. Typical collector-emitter saturation voltage.
May 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
VBEsat / V
1.2
BU4525AF/X/W
Ths = 25 C
Ths = 85 C
10
Zth K/W
bu4525aw
1.1
IC = 9 A
1
1
0.5
0.2
0.9
0.1
0.1
0.05
0.8
0.02
IC = 7 A
0.01
P
D
t
p
D=
t
p
T
t
0.7
T
0.6
0.001
1.0E-07
1E-05
1E-03
1E-01
1E+01
0
1
2
3
IB / A
4
t/s
Fig.9. Typical base-emitter saturation voltage.
Fig.12. Transient thermal impedance.
10
ts/tf / us
10
Ic(sat) (A)
8
ts
ICsat = 9 A
Ths = 85 C
Freq = 16 kHz
8
6
6
4
4
2
2
tf
0
0
0
1
2
3
IB / A
4
0
20
40
60
Frequency (kHz)
80
100
Fig.10. Typical collector storage and fall time.
I
C
=9 A; T
j
= 85˚C; f = 16kHz
Normalised Power Derating
with heatsink compound
Fig.13. I
Csat
during normal running vs. frequency of
operation for optimum performance
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
0
20
40
60
80
Ths / C
100
120
140
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
May 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
5.3
3.5
21
max
15.5
max
seating
plane
7.3
16 max
5.3 max
1.8
o 3.5
max
2.5
4.0
max
1
2.2 max
3.2 max
5.45
2
3
0.9 max
1.1
5.45
0.4 M
15.5
min
Fig.14. SOT429; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
May 1998
5
Rev 1.000
Microchip MCU
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