Si7880DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.003 @ V
GS
= 10 V
0.00425 @ V
GS
= 4.5 V
I
D
(A)
29
25
D
TrenchFETr Power MOSFET
D
PWM Optimized
D
New Low Thermal Resistance PowerPAKr Package with
Low 1.07-mm Profile
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
– Low-Side MOSFET in Synchronous Buck in Desktops
D
Secondary Synchronous Rectifier
PowerPAK SO-8
D
6.15 mm
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
5.15 mm
G
S
N-Channel MOSFET
Bottom View
Ordering Information: Si7880DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Avalanche Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
L = 0.1 mH
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"20
29
Steady State
Unit
V
18
14
60
50
A
I
D
I
DM
I
AS
I
S
P
D
T
J
, T
stg
25
4.5
5.4
3.4
–55 to 150
1.6
1.9
1.2
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71875
S-31727—Rev. C, 18-Aug-03
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
C/W
1
Si7880DP
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 29 A
V
GS
= 4.5 V, I
D
= 25 A
V
DS
= 6 V, I
D
= 29 A
I
S
= 4.5 A, V
GS
= 0 V
30
0.0025
0.0035
90
0.68
1.1
0.0030
0.00425
S
V
1.0
3.0
"100
1
5
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 29 A
40.5
18
10.5
1.2
30
15
110
35
55
1.8
50
25
200
60
80
ns
W
60
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V
GS
= 10 thru 4 V
50
50
60
Transfer Characteristics
I
D
– Drain Current (A)
40
I
D
– Drain Current (A)
40
30
3V
20
30
T
C
= 125_C
25_C
10
–55_C
20
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71875
S-31727—Rev. C, 18-Aug-03
www.vishay.com
2
Si7880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.005
8000
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.004
V
GS
= 4.5 V
C – Capacitance (pF)
6400
C
iss
0.003
V
GS
= 10 V
4800
0.002
3200
C
oss
1600
C
rss
0.001
0.000
0
10
20
30
40
50
60
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 29 A
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 29 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
36
54
72
90
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
18
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60
0.010
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
– On-Resistance (
W
)
0.008
I
S
– Source Current (A)
0.006
I
D
= 29 A
0.004
0.002
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0.000
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71875
S-31727—Rev. C, 18-Aug-03
www.vishay.com
3
Si7880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
160
V
GS(th)
Variance (V)
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
–50
40
I
D
= 250
mA
Power (W)
120
200
Single Pulse Power
80
–25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Safe Operating Area
100
Limited by
r
DS(on)
10
I
D
– Drain Current (A)
10 ms
100 ms
1s
T
C
= 25_C
Single Pulse
10 s
dc
1 ms
1
0.1
0.01
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 50_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71875
S-31727—Rev. C, 18-Aug-03
Si7880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71875
S-31727—Rev. C, 18-Aug-03
www.vishay.com
5
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