CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C316M3
Issued Date : 2007.03.28
Revised Date : 2013.08.07
Page No. : 1/6
BTC2881M3
Features
•
High breakdown voltage, BV
CEO
≥
200V
•
Large continuous collector current capability
•
Low collector saturation voltage
•
Complementary to BTA1201M3
•
Pb-free lead plating and halogen-free package
BV
CEO
I
C
R
CESAT(MAX)
200V
1A
0.86Ω
Symbol
BTC2881M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Pd
Limits
300
200
6
1
0.2
0.6
1
2
(Note 1)
(Note 2)
Unit
V
V
V
A
A
W
W
W
Junction Temperature
Tj
Storage Temperature
Tstg
Note
:
1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 .
When mounted on ceramic with area measuring 40×40×1 mm
BTC2881M3
150
-55~+150
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
300
200
6
-
-
-
-
-
-
120
120
30
-
-
Typ.
-
-
-
-
-
0.2
-
-
-
-
-
-
120
-
Max.
-
-
-
100
100
0.3
0.6
1
1
-
320
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Spec. No. : C316M3
Issued Date : 2007.03.28
Revised Date : 2013.08.07
Page No. : 2/6
Test Conditions
I
C
=10μA
I
C
=10mA
I
E
=10μA
V
CB
=300V
V
EB
=6V
I
C
=500mA, I
B
=50mA
I
C
=700mA, I
B
=35mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=700mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤380μs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
Y
120~240
G
160~320
Ordering Information
Device
BTC2881M3
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Marking
CB
Recommended soldering footprint
BTC2881M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
10000
Saturation Voltage---(V)
VCESAT
Spec. No. : C316M3
Issued Date : 2007.03.28
Revised Date : 2013.08.07
Page No. : 3/6
Saturation Voltage vs Collector Current
Current Gain---HFE
1000
IC=20IB
100
VCE=5V
100
IC=10IB
VCE=2V
10
1
10
100
1000
Collector Current---IC(mA)
10
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
On Voltage vs Collector Current
On Voltage---(mV)
VBESAT@IC=10IB
VBEON@VCE=5V
100
1
10
100
Collector Current---IC(mA)
1000
100
1
10
100
Collector Current---IC(mA)
1000
Power Derating Curve
2.5
Power Dissipation---PD(W)
2
1.5
1
0.5
0
0
50
100
150
Ambient Temperature---TA(℃)
200
See note 2 on page 1
See note 1 on page 1
BTC2881M3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C316M3
Issued Date : 2007.03.28
Revised Date : 2013.08.07
Page No. : 4/6
Carrier Tape Dimension
BTC2881M3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C316M3
Issued Date : 2007.03.28
Revised Date : 2013.08.07
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2881M3
CYStek Product Specification
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