CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 1/7
BTC2655K3
Features
•
High breakdown voltage, BV
CEO
≥
60V
•
Large continuous collector current capability
•
Low collector saturation voltage
•
Pb-free lead plating package
BV
CEO
I
C
R
CESAT(max)
60V
2A
300mΩ
Symbol
BTC2655K3
Outline
TO-92L
B：Base
C：Collector
E：Emitter
Ordering Information
Device
BTC2655K3-0-TB-G
BTC2655K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTC2655K3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 2/7
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
R
θJA
Tj ; Tstg
Limits
120
60
7
2
5
(Note)
0.5
900
139
-55~+150
Unit
V
V
V
A
A
A
mW
°C/W
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*R
CE(sat)
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
ton
tstg
tf
Min.
120
60
7
-
-
-
-
-
0.5
200
80
-
-
-
-
-
Typ.
-
-
-
-
-
100
100
-
0.9
-
-
250
13
40
500
120
Max.
-
-
-
100
100
300
300
350
1.2
400
-
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
m
Ω
mV
V
-
-
MHz
pF
ns
Test Conditions
I
C
=50μA
I
C
=1mA
I
E
=50μA
V
CB
=120V
V
EB
=7V
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=20mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=1.5A
V
CE
=2V, I
C
=300mA, f=100MHz
V
CB
=10V, I
E
=0A,f=1MHz
V
CC
=30V, I
C
=1A, I
B
1=-I
B
2=33mA,
R
L
=30
Ω
*Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
BTC2655K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
2000
1800
Collector Current---IC(mA)
1600
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
IB=0
IB=2mA
IB=4mA
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 3/7
Emitter Grounded Output Characteristics
700
Collector Current---IC(A)
IB=2.5mA
IB=2mA
IB=1.5mA
IB=1mA
IB=500uA
IB=10mA
IB=8mA
IB=6mA
600
500
400
300
200
100
IB=0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Emitter Grounded Output Characteristics
140
IB=500uA
Current Gain vs Collector Current
1000
VCE=5V
Collector Current---IC(mA)
120
IB=400uA
IB=300uA
IB=200uA
80
60
40
20
0
0
1
2
3
4
Current Gain---HFE
100
100
VCE=2V
VCE=1V
IB=100uA
IB=0
10
5
6
1
Collector-to-Emitter Voltage---VCE(V)
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
VCE(SAT)
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
1000
IC=100IB
IC=50IB
VBE(SAT)@IC=50IB
100
IC=20IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
BTC2655K3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
On Voltage vs Collector Current
1000
1000
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 4/7
Capacitance Characteristics
f=1MHz
Cib
On Voltage---(mV)
Capacitance---(pF)
100
10
Cob
VCE=2V
100
1
10
100
1000
Collector Current---IC(mA)
10000
1
0.1
1
10
Reverse-biased Voltage---(V)
100
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---FT(MHZ)
Power Derating Curve
1000
900
Power Dissipation---PD(mW)
800
700
600
500
400
300
200
100
0
0
50
100
150
Ambient Temperature---TA(℃)
200
100
FT@VCE=5V
10
1
10
100
Collector Current --- IC(mA)
1000
BTC2655K3
CYStek Product Specification
CYStech Electronics Corp.
TO-92L Taping Outline
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 5/7
DIM
A1
A
T
d
d1
P
P0
P2
F1, F2
△h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△P
BTC2655K3
Item
Component body width
Component body height
Component body thickness
Lead wire diameter
Lead wire diameter 1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Component alignment, F-R
Tape width
Hole down tape width
Hole position
Hole down tape position
Height of component from tape center
Lead wire clinch height
Lead wire (tape portion)
Feed hole diameter
Taped lead thickness
Carrier tape thickness
Position of hole
Millimeters
Min.
4.70
7.80
3.70
0.35
0.60
12.40
12.50
6.05
2.20
-1.00
17.50
5.50
8.50
-
19.00
15.50
2.50
3.80
0.35
0.15
3.55
Max.
5.10
8.20
4.10
0.55
0.80
13.00
12.90
6.65
2.80
1.00
19.00
6.50
9.50
1.00
21.00
16.50
-
4.20
0.45
0.25
4.15
Component alignment
-1.00
1.00
CYStek Product Specification
编程基础
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