SEMICONDUCTOR
RoHS
NST120F06 / NST120F06-A
RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 60A
×
2
FEATURES
Fast recovery time characteristic
Electrically isolated base plate
Large creepage distance between terminal
Simplified mechanical designs, rapid assembly
Compliant to RoHS
Designed and for industrial level
Available
RoHS*
COMPLIANT
DESCRIPTION
This SOT-227 modules with FRED rectifier are available
in two basic configurations. They are the antiparallel
and the parallel configurations. The antiparallel configuration
NST120F06-A is used for simple series rectifier and high
voltage application. The parallel configuration NST120F06 is
used for simple parallel rectifier and high current application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. These modules are intended
for general applications such as power supplies, battery
chargers, electronic welders, motor control, DC chopper, and
inverters.
CIRCUIT CONFIGURATION
3
4
3
4
2
1
2
1
Parallel
NST120F06
Anti-Parallel
NST120F06-A
APPLICATIONS
Switching power supplies
Inverters
Motor controllers
Converters
Snubber diodes
Uninterruptible power supplies (UPS)
Induction heating
High speed rectifiers
PRODUCT SUMMARY
V
R
V
F
(typical) at 125
ºC
Q
rr
(typical)
I
RRM
(typical)
t
rr
(typical)
I
F(DC)
at T
C
per diode
600
V
1.4
V
220nC
4A
40
ns
60A at
100
ºC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
SYMBOL
V
R
per leg
per module
TEST CONDITIONS
VALUES
600
UNITS
V
I
F
I
FSM
V
ISOL
P
D
T
J
, T
Stg
T
c
= 100
ºC
T
J
= 25
ºC
t = 1 minute
60
120
800
2500
180
71
- 55
to
150
V
W
°C
A
RMS isolation voltage, any terminal to case
Maximum power dissipation
T
c
= 25
ºC
T
c
= 100
ºC
Operating junction and storage temperature range
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Page 1 of 6
SEMICONDUCTOR
RoHS
NST120F06 / NST120F06-A
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 60
A
600
-
-
-
-
-
-
1.6
1.9
1.4
2
-
90
-
1.8
2.1
1.6
20
2000
µA
pF
V
Maximum forward voltage
V
FM
I
F
= 120
A
I
F
= 60
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 125°C,
V
R
= V
R
rated
V
R
= 200V
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Reverse recovery time
I
RRM1
I
RRM2
Reverse recovery time
Q
rr1
Q
rr2
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 250mA (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = -100 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 60A
dI
F
/dt = -200 A/µs
V
R
=400 V
-
-
-
-
-
-
-
-
55
40
130
170
4
10
220
920
65
-
ns
-
-
-
-
-
-
nC
A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
(T
J
= 25
ºC unless otherwise specified)
SYMBOL
MIN.
TYP.
MAX.
UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to sink, flat, greased surface
Weight
Mounting torque
RthJC
RthCS
-
-
-
-
-
-
-
0.05
30
-
0.7
0.35
-
-
1.1
g
Nm
ºC/W
K/W
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Page 2 of 6
SEMICONDUCTOR
RoHS
NST120F06 / NST120F06-A
RoHS
Nell High Power Products
Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.70
Thermal impedance(°C/W), Z
θJC
0.60
D =0.9
0.50
0.7
0.40
0.30
0.20
0.10
0
10
0.5
P
DM
t
1
t
2
0.3
0.1
0.05
-5
-4
SINGLE PULSE
10
10
-3
Duty Factor D =t 1 /t 2
Peak T
J
= P
DM
xZ
θ
JC
+T
C
10
-2
10
-1
1.0
Rectangular pulse duration (seconds)
Fig.1b transient thermal impedance model
T
J
(°C)
0.159
0.255
T
C
(°C)
0.186
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.0056
0.0849
0.489
Fig.2 Forward current vs. forward voltage
200
Fig.3 Reverse recovery time vs. current rate of change
200
T
J
= 125°C
Reverse recovery time, t
rr
(ns)
180
180
160
Z
EXT
Dissipated Power
(Watts)
V
R
= 800V
120A
60A
Forward current, I
F
160
140
140
120
100
80
60
40
20
0
30A
(A)
120
100
80
60
40
20
0
0
0.5
1
1.5
T
J
=150°C
T
J
=-55°C
T
J
=125°C
T
J
=25°C
2
2.5
0
200
400
600
800
1000
1200
Anode-to-cathode voltage (V), V
F
Current rate of change(A/μs), -di
F
/dt
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Page 3 of 6
SEMICONDUCTOR
RoHS
NST120F06 / NST120F06-A
RoHS
Nell High Power Products
Fig.4 Reverse recovery charge vs. current rate of change
2500
T
J
= 125°C
Fig 5. Reverse recovery current vs. current rate of change
40
T
J
= 125°C
Reverse recovery charge, Q
rr
Reverse recovery current,I
RRM
V
R
= 800V
35
30
25
20
(A)
15
10
5
0
0
V
R
= 800V
120A
2000
120A
60A
(nC)
1500
60A
1000
30A
500
30A
0
0
200
400
600
800
1000
1200
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
Current rate of change (A/μs), -di
F
/dt
Fig6. Dynamic parameters vs. junction temperature
1.2
trr
1.0
Qrr
Fig.7 Maximum average forward current vs. case temperature
120
100
Duty cycle = 0.5
T
J
=175°C
Dynamic parameters, K f
(Normalized to 1000A/µs)
0.8
I
RRM
0.6
0.4
trr
80
l F(AV) (A)
60
40
Qrr
0.2
0.0
20
0
0
25
50
75
100
125
150
25
50
75
100
125
150
175
Junction temperature (°C),T
J
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
700
Junction capacitance, C J
600
500
400
300
200
100
0
(pF)
1
10
reverse voltage (V), V
R
100
200
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Page 4 of 6
SEMICONDUCTOR
RoHS
NST120F06 / NST120F06-A
RoHS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
V
R
= 200
V
0.01
Ω
L
= 70
µH
D.U.T.
dIF
/dt
adjust
D
G
IRFP250
S
Fig.10 Reverse recovery waveform and definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dI
F
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
t
rr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
I
RRM
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by t
rr
and I
RRM
Qrr
=
t
rrx
l
RRM
2
(5)
dI
(rec)M
/dt -
peak rate of change of
current during t
b
portion of t
rr
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Page 5 of 6
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