SEMICONDUCTOR
RoHS
NKD55A/NKJ55A/NKC55A/NKE55A Series
RoHS
Nell High Power Products
Standard Recovery Diodes, 60A
(ADD-A-PAK
Power Modules)
80
2-Ø6.4
6
7
1
2
3
15
20
92
20
15
ADD-A-PAK
3-M5 SCREWS
18
68
FEATURES
High voltage
3000 V
RMS
isolating voltage
lndustrial standard package
UL approved file E320098
Glass passivated chips
Low thermal resistance
Designed and qualified for industrial level
Compliant to RoHs
29.5
31
5
6
All dimensions in millimeters
BENEFITS
Excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate
Up to 1600V
High surge capability
Easy mounting on heatsink
MECHANICAL DESCRIPTION
The new generation of ADD-A-PAK module, combines
the excellent thermal performances obtained by the usage
of exposed direct bonded copper substrate, with advanced
compact simple package solution and simplified internal
structure with minimized number of interfaces.
ELECTRICAL DESCRIPTION (APPLICATIONS)
These modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, temperature and
motor speed control circuits, UPS and battery charger.
4
5
1
2
3
NKD
NKJ
NKC
NKE
UNIT
1
2
3
PRODUCT SUMMARY
I
F(AV)
Type
60A
Modules-Diode, High Voltage
1
2
3
2
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
CHARACTERISTICS
T
C
= 100°C
VALUES
60
94
50 HZ
60 HZ
50 HZ
60 HZ
1300
1360
8.45
7.68
84.5
A
kA
2
s
I
2
√t
V
RRM
t
J
T
stg
Range
kA
2
√s
V
ºC
400 to 1600
-40 to 150
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Page 1 of 6
21
SEMICONDUCTOR
RoHS
NKD55A/NKJ55A/NKC55A/NKE55A Series
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
l
RRM
,
MAXIMUM
AT T
J
= 150°
C
mA
04
NKD55..A
NKJ55..A
NKC55..A
NKE55..A
08
12
14
16
500
900
1300
1500
1700
8
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
100
DC at 100°C case temperature
t
= 10ms
Maximum peak, one-cycle forward,
non-reptitive surge current
I
FSM
VALUES
60
UNIT
A
ºC
94
1300
1360
A
t
= 8.3ms
t
= 10ms
t
=
8.3ms
t
= 10ms
No voltage
reapplied
100%V
RRM
reapplied
No voltage
reapplied
100%V
RRM
reapplied
A
1094
Sinusoidal half wave,
initial T
J
= T
J
maximum
1146
8.45
7.68
5.98
5.45
84.5
0.74
V
0.86
3.90
mΩ
3.40
1.35
V
kA
2
√
s
kA
2
s
Maximum l
2
t for fusing
t
= 8.3ms
I
2
t
t
= 10ms
t
= 8.3ms
Maximum l
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
t = 0.1 to 10 ms, no voltage reapplied
(16.7% x
π
x l
F(AV)
< I <
π
x l
F(AV)
),T
J
=T
J
maximum
(I
>
π
x l
F(AV)
),T
J
= T
J
maximum
(16.7% x
π
x l
F(AV)
< I <
π
x l
F(AV)
),T
J
= T
J
maximum
(I
>
π
x l
F(AV)
), T
J
= T
J
maximum
l
FM
= 165A, T
J
= 25°C
,
t
p
= 400
µs
square wave
r
f1
r
f2
V
FM
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
Maximum RMS insulation Voltage
SYMBOL
l
RRM
V
INS
TEST CONDITIONS
T
J
= 150°C
50 Hz
VALUES
8
3000 (1 min)
3600 (1 s)
UNITS
mA
V
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Page 2 of 6
SEMICONDUCTOR
RoHS
NKD55A/NKJ55A/NKC55A/NKE55A Series
RoHS
N
ell
High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
SYMBOL
T
J
,T
stg
R
thJC
DC operation
Mounting surface flat, smooth
and greased
A mounting compound is recommended
and the torque should be rechecked
after a period of 3 hours to allow for the
spread of the compound.
TEST CONDITIONS
VALUES
-40 to 150
0.33
°C/W
R
thCS
0.1
UNIT
°C
Mounting force,
±10%
to heatsink, M6
busbar, M5
4
Nm
3
115
4.06
g
oz.
Approximate weight
Case style
JEDEC
ADD-A-PAK (TO-240AA)
ΔR
thJC
CONDUCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
0.136
90°
0.173
60°
0.236
30°
0.346
RECTANGULAR WAVE CONDUCTION
UNITS
180°
0.09
120°
0.145
90°
0.185
60°
0.243
30°
0.349
°C/W
NKD55/NKJ55
NKC55/NKE55
Note
0.115
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Ordering Information Tabel
Device code
NKD
1
55
2
/
16
A
3
4
1
2
3
4
-
Module type, NKD/NKJ/NKC for ( Diode + Diode ) module
NKE for single diode
-
Current rating : I
F(AV)
-
Voltage code x 100 = V
RRM
-
Assembly type,
''A''
for soldering type
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Page 3 of 6
SEMICONDUCTOR
RoHS
NKD55A/NKJ55A/NKC55A/NKE55A Series
RoHS
Nell High Power Products
Fig.1 Current ratings characteristics
150
R
thJC
(DC) = 0.33°C/W
Fig.2 Current ratings characteristics
150
R
thJC
(DC) = 0.33°C/W
Maximum allowable case
temperature(˚C)
Maximum allowable case
temperature(˚C)
140
Conduction Angle
140
Conduction Period
130
130
120
120
30°
110
30°
110
60°
90°
180°
120°
DC
60° 90°
120°
180°
100
0
10
20
30
40
50
60
70
100
0
20
40
60
80
100
Average forward current (A)
Average forward current (A)
Fig.3 Forward Power Loss characteristics
Fig.4 Foward power loss characteristics
90
1200
Maximum average forward
power loss (W)
Maximum average forward
power loss (W)
80
70
60
50
40
30
20
10
0
0
10
180°
120°
90°
60°
30°
RMS Limit
1000
800
600
400
200
0
180°
120°
90°
60°
30°
DC
RMS Limit
Conduction Angle
Per leg, T
j
= 150°C
Conduction Period
Per leg, T
j
= 150°C
20
30
40
50
60
70
0
20
40
60
80
100
Average forward current (A)
Average forward current (A)
Fig.5 Maximum non-repetitive surge
current
1200
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge
initial T
J
= T
J
max
@ 60Hz
0.0083 s
@ 50Hz
0.0100 s
Fig.6 Maximum non-repetitive surge
current
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J = 150°C, @50Hz
No Voltage Reapplied
Rated V
RRM
Reapplied
Peak half sine wave forward
current (A)
Peak half sine wave forward
current (A)
1000
1200
1000
800
600
400
200
0.01
800
600
400
Per leg
200
1
10
100
Per leg
0.1
1
Number of equal amplitude half
cycle current pulses (N)
Pulse train duration (S)
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Page 4 of 6
SEMICONDUCTOR
RoHS
NKD55A/NKJ55A/NKC55A/NKE55A Series
RoHS
Nell High Power Products
Fig.7 Forward power loss characteristics
Maximum total forward power loss (W)
120
0
100
80
60
40
20
0
0
DC
R
th
W
C
/
7°
0
.
0
0
0
0
0
0
NKD55 Series
0
Per leg
T
j
= 150°C
0
180°
(sine)
SA
=
1°
C
/
W
1.5
°C
/
W
2°C
/
W
/
W
°C
0.5
3
°C
/
W
7
°C
/
W
20
40
60
80
100 20
40
60
80 100 120 140 160
Total RMS current (A)
Maximum allowable ambient temperature (°C)
Fig.8 Forward power loss characteristics
500
Maximum total power loss (W)
R
th
400
300
180°
(sine)
180°
(rect)
SA
/
W
°C
.1
=0
0
.
3°
C
/
W
200
0
.5
°C
/
W
0
.7°C
/
W
W
C
/
2°
0
.
100
2 x NKD55 Series
single phase bridge connected
T
j
= 150°C
0
0
20
40
60
80
100 120 140 160 20
40
60
80 100 120 140 160
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig.9 Forward power loss characteristics
500
Maximum total power loss (W)
400
120°
(rect)
R
300
200
100
3 x NKD55 Series
three phase bridge connected
T
j
= 150°C
=
0.
3
0.4
°C
/
W
°C
0.5
°C
/
W
/
W
0.7
°C
/
W
1
°C
/
W
1.5
°C
/W
3
°C
/W
th
SA
0
0
20
40
60
80 100 120 140 160
20
40
60
80 100 120 140 160
Total output current (A)
Maximum allowable ambient temperature (°C)
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Page 5 of 6
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