SEMICONDUCTOR
NKD500/NKJ500/NKC500 Series
Standard Diodes, 500 A
(
SUPER MAGN-A-PAK Power Modules)
RoHS
RoHS
Nell Semiconductors
48
50
38
4-Ø6.5
36+1
14
112+1
SUPER MAGN-A-PAK
128+1
150+3
3-M10 SCREWS
2.8x0.8+0.1
FEATURES
•
UL approved file E320098
•
High current capability
•
High surge capability
•
High voltage ratings up to
2000
V
• 3000
V
RMS
isolating voltage with non-toxic substrate
•
Industrial standard package
•
Compliant to RoHS
22
50
53
60
All dimensions in millimeters
APPLICATIONS
•
Rectifying bridge for large motor drives
•
Rectifying bridge for large UPS
•
Rectifying power
supplier
•
Frequency converters
•
Snubber for large GTO and IGBT
-
+
+
~
+
-
NKD
NKJ
NKC
PRODUCT SUMMARY
I
F(AV)
Type
500A
Modules-Diode, High Voltage
+
-
-
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
CHARACTERISTICS
VALUES
500
UNIT
A
ºC
T
C
100
785
100
I
F(RMS)
50 HZ
60 HZ
50 HZ
60 HZ
A
ºC
I
FSM
I
2
t
21000
21990
2205
1830
22050
A
kA
2
s
I
2
√t
V
RRM
T
Stg,
T
J
Range
kA
2
√s
V
ºC
800 to 2000
-40 to 150
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Page 1 of 4
66+1
48
SEMICONDUCTOR
NKD500/NKJ500/NKC500 Series
RoHS
RoHS
Nell Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
V
RRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
1600
2000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
l
RRM
MAXIMUM
AT T
J
MAXIMUM
mA
08
NKD500
NKJ500
NKC500
12
16
20
900
1300
1700
2100
40
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward
non-reptitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
TEST CONDITIONS
180° conduction, half sine wave
VALUES
500
100
UNIT
A
ºC
180° conduction, half sine wave at T
C
= 100
°C
t
= 10ms
t
= 8.3ms
t
= 10ms
No voltage
reapplied
785
21
A
kA
22
Sine half wave,
initial T
J
= T
J
maximum
2205
1830
1548
1293
22050
1.4
kA
2
√
s
kA
2
s
Maximum
l
2
t
for fusing
I
2
t
t
= 8.3ms
t
= 10ms
t
= 8.3ms
100%V
RRM
reapplied
Maximum l
2
√t
for fusing
Maximum forward voltage drop
I
2
√t
V
FM
t = 0.1 to 10 ms, no voltage reapplied
l
pk
= 1500A, T
J
= 25°C
V
BLOCKING
PARAMETER
RMS insulation Voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
V
INS
TEST CONDITIONS
t = 1s
T
J
= T
J
maximum, rated V
RRM
applied
T
J
= 25°C
VALUES
3000
40
50
UNIT
V
mA
µ
A
l
RRM
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
,T
stg
TEST CONDITIONS
VALUES
-40 to 150
UNIT
°C
R
thJC
DC operation
Mounting surface, smooth,
flat and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
0.09
°C/W
R
thCS
0.02
Mounting torque,
±10%
Approximate weight
Case style
SMAP to heatsink, M6
busbar to SMAP, M10
4
N.m
12
1800
g
See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
www.nellsemi.com
Page 2 of 4
SEMICONDUCTOR
NKD500/NKJ500/NKC500 Series
RoHS
RoHS
Nell Semiconductors
Ordering Information Tabel
Device code
NKD
1
500
2
/
16
3
1
2
3
-
Module type, NKD, NKJ and NKC for ( Diode + Diode ) module
-
Current rating : I
F(AV)
-
Voltage code x 100 = V
RRM
Fig.1 On-state current vs. voltage characteristic
Fig.2 Transient thermal impedance
(junction-case)
0.01
Transient thermal impedance (°C/W)
3.2
On-state peak voltage (V)
2.8
T
J
= 150°C
0.08
2.4
2.0
1.6
1.2
0.8
100
0.06
0.04
0.02
1000
On-state current (A)
10000
0
0.001
0.01
0.1
Time (s)
1
10
Fig.3 Power consumption vs. average current
Fig.4 Case temperature vs. on-state average
current
Maximum allowable case temperature (°C)
700
Maximum power consumption (W)
180
º
160
140
Conduction Angle
600
90
º
Conduction Angle
120
º
60
º
30
º
500
400
300
200
100
0
0
100
200
120
100
80
60
40
30
º
60
º
90
º
120
º
180
º
300
400
500
600
0
200
400
600
800
On-state average current (A)
Average forward current (A)
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Page 3 of 4
SEMICONDUCTOR
NKD500/NKJ500/NKC500 Series
RoHS
RoHS
Nell Semiconductors
Fig.5 On-state surge current vs cycles
23
21
On-state surge current (KA)
2000
19
17
15
13
11
9
400
7
5
1
10
Cycles @50Hz
100
0
1
I
2
t ( KA
2
S )
1600
1200
800
2400
Fig.6 I
2
t Characteristic
10
Time (ms)
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Page 4 of 4
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