SEMICONDUCTOR
NKFD200-40 Series
RoHS
RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode Module, 200 A
FEATURES
Very low Q
rr
and t rr
Lead (Pb)-free
Designed and qualified for industrial level
Reduced RFI and EMI
Reduced snubbing
DESCRIPTION
FRED diodes are optimized to reduce
losses and EMI/RFI in high frequency
power conditioning systems. An
extensive characterization of the
recovery behavior for different values
of current, temperature and dl/dt
simplifies the calculations of losses in
the operating conditions. The softness
of the recovery eliminates the need for
a snubber in most applications.
TO-244
(non-insulated)
TO-244
(insulated)
Lug
terminal
anode 1
Lug
terminal
anode 2
Lug terminal
common cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
Base
common cathode
TYPICAL APPLICATIONS
Power converters
Motor drives
Welders
Switching power supplies
*Add suffix R for common anode
PRODUCT SUMMARY
I
F(AV)
V
R
I
F(DC) at
T
C
200A
400V
160A
at 100
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
V
R
T
C
=25°C,
per device
Average forward current
I
F(AV)
T
C
=120°C
T
C
=100°C
Limited by junction temperature,
per leg
L = 100
μΗ,
duty cycle limited by
maximum T
J
T
C
=25°C
T
C
=100°C
per device
per leg
TEST CONDITIONS
MAX.
400
315
200
100
160
1400
A
UNIT
V
DC forward current
Single pulse forward current
I
F(DC)
l
FSM
E
AS
Non-repetitive avalanche energy
1.4
658
263
- 55
to
150
mJ
Maximum power dissipation
Operating junction and storage temperature range
P
D
T
J
, T
Stg
W
°C
www.nellsemi.com
Page 1 of 7
SEMICONDUCTOR
NKFD200-40 Series
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
(T
J
= 25 ºC unless otherwise specified)
PARAMETER
UNIT
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 100
A
400
-
-
-
-
-
-
-
-
-
1.10
1.30
1.0
0.6
5.0
280
6.0
-
-
1.25
1.40
1.15
5.0
50
380
-
3000(1min)
3600(1s)
V
Maximum forward voltage
V
FM
I
F
= 200
A
I
F
= 100
A, T
J
= 125
ºC
Maximum reverse leakage
current per leg
Junction capacitance
Series inductance
Maximum RMS insulation
voltage (for insulated type)
T
J
= 125°C,
V
R
= 400V
I
RM
T
J
= 25°C,
V
R
= 400V
C
T
L
S
V
INS
V
R
= 200V
From top of terminal hole to mounting plane
50Hz
mA
µA
pF
nH
V
DYNAMIC RECOVERY CHARACTERISTICS PER LEG
(T
J
= 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
Reverse recovery time
t
rr
I
F
= 1.0A, dl
F
/dt=200A/μs, V
R
= 30V
T
J
= 25
ºC
T
J
= 125
ºC
Peak recovery current
l
RRM
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 140A
dI
F
/dt = 200 A/µs
V
R
= 200 V
-
-
-
-
-
-
-
-
-
-
75
50
77
290
7.5
16
290
2300
320
270
90
-
ns
120
440
14
30
780
3600
-
-
A/μs
nC
A
Reverse recovery charge
Peak rate of recovery
current
Q
rr
dl
(rec)M
/dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to
case per leg
TO-244 (non-insulated)
R
thJC
TO-244 (insulated)
TO-244 (non-insulated)
R
thJC
TO-244 (insulated)
R
thCS
-
-
-
-
30 (3.4)
12 (1.4)
30 (3.4)
-
-
-
0.10
80 (2.82)
95 (3.36)
-
-
-
-
-
0.14
-
-
g (oz.)
TO-244 (insulated)
Mounting torque
(1)
Mounting torque center hole
Terminal torque
Vertical pull
2” lever pull
-
40 (4.6)
18 (2.1)
40 (4.6)
80
lbf . in
35
Note
(1)Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf. in steps until desired or maximum torque limits are reached
SYMBOL
T
J,
T
stg
MIN.
TYP.
MAX.
UNIT
ºC
-55
-
-
-
-
-
-
-
150
0.19
0.28
0.095
Thermal resistance, junction to
case per module
ºC/W
Typical thermal resistance, case to heatsink
TO-244 (non-insulated)
Weight
lbf . in
(N . m)
www.nellsemi.com
Page 2 of 7
SEMICONDUCTOR
NKFD200-40 Series
RoHS
RoHS
Nell High Power Products
Ordering Information Tabel
Device code
NK
1
F
2
D
3
200
4
-
40
5
R
6
I
7
1 -
Nell's power module
2 -
F for Ultrafast soft recovery diode
3 -
D for Dual Diodes, TO-244 Package
4 -
Maximum average forward current, A
5 -
Voltage rating (40 = 400V)
6 -
None for common cathode configuration
7
"R"
for common anode configuration
-
None for non-insulated type
"
I
"
for insulated type
Fig.1 Maximum forward voltage drop vs.
lnstantaneous forward current (per leg)
lnstantaneous forward current, I
F
(A)
1000
10000
Fig.2 Typical reverse current vs.
reverse voltage (per leg)
T
J
=150°C
Reverse current, l
R
(μA)
1000
T
J
=125° C
100
100
10
T
J
=150°C
T
J
=125°C
T
J
=25°C
10
1
T
J
=25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6 1.8
2.0
0.1
100
200
300
400
Forward voltage drop, V
FM
(V)
Reverse voltage, V
R
(V)
Fig.3 Typical junction capacitance vs.
reverse voltage (per leg)
10000
Fig.4 Maximum allowable case temperature vs.
DC forward current (per leg)
160
Junction capacitance, C
T
(pF)
Maximum allowable case
temperature (
°
C)
140
120
100
80
60
40
20
0
DC
1000
T
J
=25 °C
100
1
10
100
1000
0
100
200
300
400
Reverse voltage, V
R
(V)
DC forward current, l
F(AV)
(A)
www.nellsemi.com
Page 3 of 7
SEMICONDUCTOR
NKFD200-40 Series
RoHS
RoHS
Nell High Power Products
Fig.5 Typical reverse recovery time vs. dl
F
/dt
(per leg)
450
400
350
300
T
J
=125°C
T
J
=25°C
l
F
= 200A
l
F
=120A
l
F
=5 0 A
Fig.6 Typical recovery current vs. dl
F
/dt
(per leg)
70
60
50
T
J
=125°C
T
J
=25°C
l
RRM
(A)
t
rr
(ns)
250
200
150
100
50
0
100
dl
F
/dt(A/
µ
s)
1000
40
30
20
10
0
100
l
F
= 200A
l
F
=120A
l
F
=5 0 A
1000
dl
F
/dt(A/
µ
s)
Fig.7 Typical stored charge vs. dl
F
/dt
(per leg)
6000
5000
4000
T
J
=125°C
T
J
=25°C
Fig.8 Typical dl
(rec)M
/dt vs. dl
F
/dt (per leg)
10000
Q
rr
(nC)
l
F
= 200A
l
F
=120A
l
F
=5 0 A
dl
(rec)M
/dt
(A/
µ
s)
200A
120A
50 A
3000
2000
1000
0
100
dl
F
/dt(A/
µ
s)
1000
T
J
=125°C
T
J
=25°C
1000
100
100
dl
F
/dt(A/
µ
s)
1000
Fig.9-1 Maximum thermal impedance R
th(j-c)
characteristics
(per leg, for TO-244 non-insulated)
1
Thermal response , R
th(j-c)
0.1
0.01
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular pulse duration, t
1
(s)
www.nellsemi.com
Page 4 of 7
SEMICONDUCTOR
NKFD200-40 Series
RoHS
RoHS
Nell High Power Products
Fig.9-2 Maximum thermal impedance R
th(j-c)
characteristics
(per leg, for TO-244 insulated)
1
Thermal response , R
th(j-c)
0.1
0.01
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular pulse duration, t
1
(s)
Fig.10 Reverse recovery parameter test circuit
V
R
=200V
0.01Ω
L=70µH
D.U.T.
dl
F
/dt
adjust
D
G
IRFP250
S
Fig.11 Reverse recovery waveform and definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
l
RRM
0.5 l
RRM
dl
(rec)M
/dt
(5)
0.75 l
RRM
(1)
dl
F
/dt
(1) dl
F
/dt - rate of change of current
through zero crossing
(2) l
RRM
- peak reverse recovery current
(4) Q
rr
- area under curve defined by t
rr
and
l
RRM
Q
rr
=
t
rr
xl
RRM
2
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative (5) dl
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
going l
F
to point where a line passing
through 0.75 l
RRM
and 0.50 l
RRM
extrapolated to zero current.
www.nellsemi.com
Page 5 of 7
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
