SEMICONDUCTOR
RoHS
NKD160AS/NKJ160AS/NKC160AS Series
RoHS
N
ell High Power Products
Standard Recovery Diodes, 160 A
(
INT
-
A
-
PAK Power Modules
)
16.5
23
23
17.5
2-Ø6.5
2
26
1
80
93
3
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(
AI
2
O
3
)
• 3000
V
RMS
isolating voltage
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power
diodes
in four
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
7.5
3-M5 SCREWS
•
Industrial standard package
All dimensions in millimeters
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
~
1
+
2
-
3
NKD
NKJ
NKC
-
1
+
2
+
3
PRODUCT SUMMARY
I
F(AV)
Type
160 A
Modules - Diode, High Voltage
+
1
-
2
-
3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
t
I
2
√
V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
VALUE
160
T
C
100
251
6000
6300
180
163
1800
400 to 1600
-40 to 150
kA
2
s
kA
2
√s
V
° C
A
UNITS
A
° C
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Page 1 of 4
21
30.5
SEMICONDUCTOR
RoHS
NKD160AS/NKJ160AS/NKC160AS Series
RoHS
N
ell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKD160..S
NKJ160..S
NKC160..S
08
12
14
16
V
RRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
,
MAXIMUM NON
-
REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
8
I
RRM
AT
150 °
C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
TEST CONDITIONS
180° conduction, half sine wave
180° conduction, half sine wave ,50Hz ,T
C
= 100
°
C
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√
for fusing
t
Maximum forward voltage drop
2
t
I
√
VALUE
160
100
251
6000
UNITS
A
°C
A
No voltage
reapplied
6300
Sine half wave,
initial T
J
=
T
J
maximum
180
163
126
114
1800
1.4
kA
2
√s
V
2
s
kA
100%V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
I
FM
= 300A , T
J
= 25 ° C, 180° conduction
V
FM
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
SYMBOL
I
RRM
T
J
= 150 ° C
50 Hz, circuit to base ,all terminals shorted ,t = 1s
RMS isolation Voltage
V
ISO
t = 60s
2500
TEST CONDITIONS
VALUES
8
3000
V
UNITS
mA
www.nellsemi.com
Page 2 of 4
SEMICONDUCTOR
RoHS
NKD160AS/NKJ160AS/NKC160AS Series
RoHS
N
ell High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
IAP to heatsink, M6
busbar to IAP, M5
SYMBOL
T
Stg
, T
J
R
thJC
R
thCS
DC operation
Mounting surface, smooth , flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 150
0.21
° C/W
0.054
UNITS
°C
4 to 6
N.m
140
Approximate weight
4.9
Case style
New INT-A-PAK
g
oz.
ORDERING INFORMATION TABLE
Device code
NKD
1
160
2
/
16
3
A
S
5
4
1
2
3
4
5
-
-
-
-
-
Module type: NKD.NKJ and NKC for (Diode + Diode) module
Current rating
:
I
F
(
AV
)
Voltage code x
100 =
V
RRM
Assembly type,”A” for soldering type
”S” for sanrex’s IAP package
www.nellsemi.com
Page 3 of 4
SEMICONDUCTOR
RoHS
NKD160AS/NKJ160AS/NKC160AS Series
RoHS
N
ell High Power Products
Fig1. Power consumption
Fig2.Forward Current Derating Curve
250
DC
DC
Rec.120
Rec.30
Rec.60
300
Maximum power consumption(W)
200
Forward Current (A)
Sin.180
Sin.180
150
Rec.120
150
Rec.60
100
Rec.30
50
0
0
120
240
0
0
50
100
150
On-state average current (A)
Fig3.Transient thermal impedance
Case temperature(
°
C)
Fig4.Max Non-Repetitive Forward Surge Current
8000
50HZ
Transient thermal impedance(° C/W)
0.3
Zth(j-c)
0.15
Forward surge current (A)
4000
0
0.001
0.01
0.1
1
0
10
100
1
10
100
Time (S)
Fig5.Forward Characteristics
400
Cyles @ 50Hz
On-State current (A)
300
200
typ.
max.
100
25 ° C
125 ° C
0
0
0.5
1.0
1.5
2.0
On-state peak voltage (V)
www.nellsemi.com
Page 4 of 4
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