GS8342S08/09/18/36AE-250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaSIO™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write (x36, x18, and x9) and Nybble Write (x8) function
• DLL circuitry for wide output data valid window and future
frequency scaling
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
• Pin-compatible with 72Mb and 144Mb devices
36Mb Burst of 2
SigmaSIO DDR-II™ SRAM
250 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
me
nd
ed
for
GS8342S08/09/18/36AE are built in compliance with the
SigmaSIO DDR-II SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. These are the first in a family of wide, very low
voltage HSTL I/O SRAMs designed to operate at the speeds
needed to implement economical high performance
networking systems.
Ne
w
Parameter Synopsis
-250
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
tKHKH
4.0 ns
tKHQV
0.45 ns
Rev: 1.07 8/2012
No
t
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m
1/36
De
sig
SigmaSIO DDR-II™ Family Overview
n—
Di
sco
nt
inu
ed
Pr
od
u
A Burst of 2 SigmaSIO DDR-II SRAM is a synchronous
device. It employs dual input register clock inputs, K and K.
The device also allows the user to manipulate the output
register clock input quasi independently with dual output
register clock inputs, C and C. If the C clocks are tied high, the
K clocks are routed internally to fire the output registers
instead. Each Burst of 2 SigmaSIO DDR-II SRAM also
supplies Echo Clock outputs, CQ and CQ, which are
synchronized with read data output. When used in a source
synchronous clocking scheme, the Echo Clock outputs can be
used to fire input registers at the data’s destination.
Each internal read and write operation in a SigmaSIO DDR-II
B2 RAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaSIO DDR-II B2 is always one address pin less
than the advertised index depth (e.g., the 4M x 8 has an 2M
addressable index).
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
Clocking and Addressing Schemes
© 2006, GSI Technology
GS8342S08/09/18/36AE-250/200/167
4M x 8 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
D
OFF
NC
NC
NC
NC
NC
NC
TDO
2
NC
NC
NC
D4
NC
NC
D5
V
REF
NC
NC
Q6
NC
D7
NC
TCK
3
SA
NC
NC
NC
Q4
NC
Q5
V
DDQ
NC
NC
D6
NC
NC
Q7
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
5
NW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
6
K
K
SA
7
NC
NW0
SA
8
LD
SA
V
SS
V
SS
9
SA
10
SA
NC
NC
NC
D2
NC
NC
V
REF
Q1
NC
NC
NC
NC
NC
TMS
11
CQ
Q3
D3
NC
Q2
NC
NC
ZQ
D1
NC
Q0
D0
NC
NC
TDI
De
sig
Ne
w
me
nd
ed
for
SA
SA
SA
SA
11 x 15 Bump BGA—15 x 17 mm
2
Body—1 mm Bump Pitch
Re
co
m
Notes:
1. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7.
2. It is recommended that H1 be tied low for compatibility with future devices.
3. A2, A7, and B5 are reserved for future use as an address pin for higher density devices. They are not connected to the die on this device.
They may be left floating or be treated as an MCL pin (Must Connect Low) to assure the site will successfully accomodate a future, higher
density device. These pins may be marked as V
SS
, NC, or MCL by some vendors of compatible SRAMs
Expansion Address
A2
A7
B5
72Mb
144Mb
288Mb
Rev: 1.07 8/2012
No
t
2/36
n—
Di
sco
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inu
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Pr
od
u
NC
NC
NC
NC
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
NC
NC
NC
NC
NC
NC
SA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
NC
V
DDQ
© 2006, GSI Technology
GS8342S08/09/18/36AE-250/200/167
4M x 9 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
NC
NC
NC
D5
NC
NC
D6
V
REF
NC
NC
Q7
NC
D8
NC
TCK
3
SA
NC
NC
NC
Q5
NC
Q6
V
DDQ
NC
NC
D7
NC
NC
Q8
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
5
NC
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
6
K
K
SA
7
NC
BW
SA
8
LD
SA
V
SS
V
SS
9
SA
10
SA
NC
NC
NC
D3
NC
NC
V
REF
Q2
NC
NC
NC
NC
D0
TMS
11
CQ
Q4
D4
NC
Q3
NC
NC
ZQ
D2
NC
Q1
D1
NC
Q0
TDI
De
sig
Ne
w
me
nd
ed
for
SA
SA
SA
SA
11 x 15 Bump BGA—15 x 17 mm
2
Body—1 mm Bump Pitch
Re
co
m
Notes:
1. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7.
2. It is recommended that H1 be tied low for compatibility with future devices.
3. A2, A7, and B5 are reserved for future use as an address pin for higher density devices. They are not connected to the die on this device.
They may be left floating or be treated as an MCL pin (Must Connect Low) to assure the site will successfully accomodate a future, higher
density device. These pins may be marked as V
SS
, NC, or MCL by some vendors of compatible SRAMs
Expansion Address
A2
A7
B5
72Mb
144Mb
288Mb
Rev: 1.07 8/2012
No
t
3/36
n—
Di
sco
nt
inu
ed
Pr
od
u
NC
NC
NC
NC
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
NC
NC
NC
NC
NC
NC
SA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
NC
V
DDQ
© 2006, GSI Technology
GS8342S08/09/18/36AE-250/200/167
2M x 18 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
D
OFF
NC
NC
NC
NC
NC
NC
TDO
2
NC
Q9
NC
D11
NC
Q12
D13
V
REF
NC
NC
Q15
NC
D17
NC
TCK
3
SA
D9
D10
Q10
Q11
D12
Q13
V
DDQ
D14
Q14
D15
D16
Q16
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
5
BW1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
6
K
K
7
NC
BW0
SA
8
LD
SA
9
10
NC
NC
Q7
NC
D6
NC
NC
V
REF
Q4
D3
NC
Q1
NC
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
De
sig
Ne
w
me
nd
ed
for
Q17
SA
SA
SA
SA
11 x 15 Bump BGA—15 x 17 mm
2
Body—1 mm Bump Pitch
Notes:
1. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
2. It is recommended that H1 be tied low for compatibility with future devices.
3. A2, A7, and A10 are reserved for future use as an address pin for higher density devices. They are not connected to the die on this device.
They may be left floating or be treated as an MCL pin (Must Connect Low) to assure the site will successfully accomodate a future, higher
density device. These pins may be marked as VSS, NC, or MCL by some vendors of compatible SRAMs.
No
t
Re
co
m
Expansion Address
A10
A2
A7
72Mb
144Mb
288Mb
Rev: 1.07 8/2012
4/36
n—
Di
sco
nt
inu
ed
Pr
od
u
NC
SA
V
SS
V
SS
NC
NC
NC
NC
NC
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
NC
NC
NC
NC
NC
NC
SA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
V
DDQ
SA
© 2006, GSI Technology
GS8342S08/09/18/36AE-250/200/167
1M x 36 SigmaQuad SRAM—Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
Q29
Q30
D30
D
OFF
D31
Q32
Q33
D33
D34
Q35
TDO
2
NC
Q18
Q28
D20
D29
Q21
D22
V
REF
Q31
D32
Q24
Q34
D26
D35
TCK
3
NC
D18
D19
Q19
Q20
D21
Q22
V
DDQ
D23
Q23
D24
D25
Q25
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
5
BW2
BW3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
6
K
K
7
BW1
BW0
SA
8
LD
SA
9
10
NC
Q17
Q7
D15
D6
Q14
D13
V
REF
Q4
D3
Q11
Q1
D9
D0
TMS
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
De
sig
Ne
w
me
nd
ed
for
Q26
SA
SA
SA
SA
11 x 15 Bump BGA—15 x 17 mm
2
Body—1 mm Bump Pitch
No
t
Notes:
1. BW0 controls writes to D0:D8. BW1 controls writes to D9:D17.
2. BW2 controls writes to D18:D26. BW3 controls writes to D27:D35.
3. It is recommended that H1 be tied low for compatibility with future devices.
4. A2, A3, and A10 are reserved for future use as an address pin for higher density devices. They are not connected to the die on this device.
They may be left floating or be treated as an MCL pin (Must Connect Low) to assure the site will successfully accomodate a future, higher
density device. These pins may be marked as V
SS
, NC, or MCL by some vendors of compatible SRAMs.
Re
co
m
Expansion Addresses
A3
A10
A2
72Mb
144Mb
288Mb
Rev: 1.07 8/2012
5/36
n—
Di
sco
nt
inu
ed
Pr
od
u
D17
SA
V
SS
V
SS
D16
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
V
SS
V
SS
Q16
Q15
D14
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
Q13
D12
Q12
D11
D10
Q10
Q9
SA
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ct
V
DDQ
SA
© 2006, GSI Technology
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