CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 1/6
BTD965N3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386N3
Symbol
BTD965N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350μs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limits
40
20
7
5
8
(Note )
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)
*h
FE
1
*h
FE
2
f
T
Cob
Min.
20
7
-
-
-
-
230
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
150
-
Max.
-
-
0.1
1
0.1
1.0
800
-
-
50
Unit
V
V
μA
μA
μA
V
-
-
MHz
pF
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 2/6
Test Conditions
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=10V, I
E
=0
V
CB
=10V, I
E
=0
V
EB
=7V,I
C
=0
I
C
=3A, I
B
=0.1A
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=2.00A
V
CE
=6V, I
E
=50mA, f=200MHz
V
CB
=20V, I
E
=0A, f=1MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Classification Of h
FE
1
Rank
Range
Q
230~380
R
340~600
S
400~800
Ordering Information
Device
BTD965N3-Q-T1-G
BTD965N3-R-T1-G
BTD965N3-S-T1-G
HFE Rank
Q
R
S
Package
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
Shipping
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 3/6
Saturation Voltage vs Collector Current
1000
VCE(SAT)
Saturation Voltage---(mV)
IC=50IB
Current Gain---HFE
100
IC=40IB
VCE=2V
100
VCE=1V
10
IC=10IB
IC=30IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
Power Dissipation---PD(mW)
VBE(SAT) @ IC=10IB
Power Derating Curve
250
200
150
100
50
0
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 4/6
Carrier Tape Dimension
BTD2098N3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD2098N3
CYStek Product Specification
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
