CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 1/6
BTD2040N3S
Features
BV
CEO
I
C
R
CESAT
25V
1A
0.31Ω(typ.)
•
The BTD2040N3S is designed for general purpose low frequency power amplifier applications.
•
Low V
CE
(sat), V
CE
(sat)=40mV (typical), at I
C
/ I
B
= 50mA / 2.5mA
•
Pb-free lead plating and halogen-free package
Symbol
BTD2040N3S
Outline
SOT-23
C
B：Base
C：Collector
E：Emitter
B
E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
45
25
6
1
2
(Note)
225
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTD2040N3S
CYStek Product Specification
1
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*R
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
45
25
6
-
-
-
-
-
-
-
150
40
82
100
-
Typ.
-
-
-
-
-
40
0.15
0.25
0.31
-
-
-
-
-
6
Max.
-
-
-
0.5
0.5
60
0.3
0.5
0.62
1
450
-
-
-
-
Unit
V
V
V
μA
μA
mV
V
V
Ω
V
-
-
-
MHz
pF
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 2/6
Test Conditions
I
C
=100μA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=50mA, I
B
=2.5mA
I
C
=400mA, I
B
=20mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
CE
=2V, I
C
=50mA
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTD2040N3S
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
BS
Moisture Sensitivity Level : Conform to JEDEC Level 1
Recommended Storage Condition:
Temperature :
≤
30
°C
Humidity :
≤
60% RH
BTD2040N3S
CYStek Product Specification
2
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.35
0.3
Collector Current---IC(A)
Collector Current---IC(A)
1mA
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 3/6
Emitter Grounded Output Characteristics
1.4
1.2
1
0.8
0.6
0.4
0.2
0
2.5mA
2mA
1.5mA
5mA
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
500uA
400uA
300uA
200uA
IB=100uA
IB=500uA
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
Current Gain vs Collector Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Current Gain---HFE
Current Gain---HFE
100
100
VCE=1V
VCE=2V
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
Current Gain vs Collector Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
Saturation Voltage---(mV)
Current Gain---HFE
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCE=5V
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTD2040N3S
CYStek Product Specification
3
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
1000
VCESAT@IC=50IB
10000
VCESAT@IC=100IB
Saturation Voltage---(mV)
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 4/6
Saturation Voltage vs Collector Current
Saturation Voltage---(mV)
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
Saturation Voltage vs Collector Current
10000
VBESAT@IC=50IB
On Voltage vs Collector Current
10000
VBEON@VCE=1V
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
Saturation Voltage---(mV)
On Voltage---(mV)
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
Capacitance vs Reverse-biased Voltage
100
Cib
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---fT(MHz)
VCE=10V
Capacitance---(pF)
10
Cob
100
1
0.1
1
10
Reverse-biased Voltage---VR(V)
100
10
1
10
100
Collector Current---IC(mA)
1000
BTD2040N3S
CYStek Product Specification
4
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
Spec. No. : C223N3-A
Issued Date : 2004.02.18
Revised Date :2012.10.03
Page No. : 5/6
BTD2040N3S
CYStek Product Specification
5
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