CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 1/7
BTD1857AJ3G
Description
•
High BV
CEO
•
High current capability
•
Complementary to BTB1236AJ3G
•
RoHS compliant and Halogen-free package
BV
CEO
I
C
R
CESAT
160V
1.5A
310mΩ
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base
C：Collector
E：Emitter
B C E
B
C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @T
A
=25℃
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limits
180
160
5
1.5
3
1
10
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
BTD1857AJ3G
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(on)
h
FE
1
h
FE
2
f
T
Cob
Min.
180
160
5
-
-
-
-
160
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
1
1
0.6
1.5
320
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 2/7
Test Conditions
I
C
=50
µ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50
µ
A, I
C
=0
V
CB
=160V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=100mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=150mA
V
CE
=5V, I
C
=500mA
V
CE
=5V, I
C
=150mA
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Ordering Information
Device
BTD1857AJ3G
Package
TO-252
(RoHS compliant and Halogen-free)
Shipping
2500 pcs / Tape & Reel
Marking
D1857A
BTD1857AJ3G
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 3/7
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Tj=75℃
Tj=25℃
Saturation Voltage---(mV)
Current Gain---HFE
100
Tj=125℃
Tj=75℃
Tj=25℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
Tj=25℃
On Voltage vs Collector Current
1000
Tj=25℃
Saturation Voltage---(mV)
Tj=125℃
Tj=75℃
On Voltage---(mV)
Tj=125℃
Tj=75℃
VBE(SAT)@IC=10IB
VBE(ON)@VCE=5V
100
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTD1857AJ3G
Power Derating Curve
12
10
8
6
4
2
0
0
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification
Power Dissipation---PD(W)
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 4/7
Carrier Tape Dimension
BTD1857AJ3G
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 5/7
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD1857AJ3G
CYStek Product Specification
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