DIGITRON SEMICONDUCTORS
1N5711, 1N5712 & 1N6263
•
•
SCHOTTKY DIODES
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
The low forward voltage drop and fast switching make it ideal for protection of MOS devices.
MAXIMUM RATINGS @ 25°C ambient temperature unless otherwise specified.
Parameter
Peak Inverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10
μs
Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Note 1: Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Symbol
1N5711
1N6263
V
RRM
P
tot
l
FSM
R
θJA
T
j
T
S
Value
70
60
400
(1)
2.0
0.3
(1)
125
(1)
-55 to +150
(1)
Unit
V
mW
A
°C/mW
°C
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Reverse Breakdown Voltage
1N5711
1N5712
1N6263
Leakage Current
1N5711, 1N6263
1N5712
Forward Voltage Drop
1N5711, 1N6263
V
F
1N5712
Junction Capacitance
1N5711
1N5712
1N6263
C
tot
V
R
=0V, f=1MHz
V
R
=50V
V
R
= 16V
l
F
=1mA
l
F
=15mA
I
F
= 35mA
V
(BR)R
l
R
=10μA
Symbol
Test Condition
Min
70
20
60
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
200
150
0.41
1.0
1.0
2.0
2.0
2.2
pF
V
V
Unit
l
R
nA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121128
DIGITRON SEMICONDUCTORS
1N5711, 1N5712 & 1N6263
SCHOTTKY DIODES
MECHANICAL CHARACTERISTICS
Case:
Polarity:
Marking:
Glass DO-35
Cathode Band
Body Painted, Alpha-Numeric
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121128