SEMICONDUCTOR
40+0.5
23+0.5
23+0.5
E2 G2
3-M5.0
4+0.6
C2E1
E2
C1
G1 E1
80+0.5
2- 6.3
93+0.5
4+0.6
17+0.5
10
17+0.5
10
17+0.5
10
2.8x0.5
7.7+0.2
17.8+0.6
35+0.6
12+0.5
31+0.6
All dimensions in millimeters
22+0.3
6.7+0.6
SEMICONDUCTOR
Fig.1 Power dissipation , P tot =f (T c )
Parameter:T j <150 C
650
600
550
500
450
400
Fig.2 Safe operating area , I C =f (V CE )
Parameter: D=0 , T c =25 C , T j <150 C
10
3
tp=19.0 s
μ
10
2
100 s
μ
P tot (W)
350
300
250
I C (A)
10
1
1 ms
10 ms
200
10
0
150
100
50
0
0
20
40
60
80
Tc ( C)
100
120
140
160
10
-1
0
10
10
1
DC
10
2
10
3
10
4
VCE (V)
www.nellsemi.com
Page 2 of 6
SEMICONDUCTOR
NSGM75GB Series
10
0
RoHS
RoHS
Fig.3 Collector current , I C =f (T c )
Parameter:V GE >15V , T j <150 C
120
110
100
90
80
70
Fig.4 Transient thermal impedance IGBT , Z thJC =f (t p )
Parameter:D=t p /T
10
-1
Z thJC (K/W)
I C (A)
60
50
40
30
20
10
0
0
20
40
60
80
TC ( C)
100
120
140
160
10
-2
D = 0.50
0.20
0.10
10
-3
single pulse
0.05
0.02
0.01
10
-4
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
tp (s)
Fig.5 Typ. output characteristics , I C =f (V CE )
Parameter:t p =80 s , T j =25 C
μ
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1
2
VCE (V)
3
4
5
17V
15V
13V
11V
9V
7V
Fig.6 Typ. output characteristics , I c =f (V CE )
Parameter:t p =80 s , T j =25 C
μ
150
140
130
120
110
100
90
17V
15V
13V
11V
9V
7V
I C (A)
I C (A)
80
70
60
50
40
30
20
10
0
0
1
2
VCE (V)
3
4
5
www.nellsemi.com
Page 3 of 6
SEMICONDUCTOR
NSGM75GB Series
Fig.8 Typ. gate charge , V GE =f (Q Gate )
Parameter:I Cpuls =75A
20
18
16
14
12
600 V
RoHS
RoHS
Fig.7 Typ. transfer characteristics , I C =f (V GE )
Parameter:t p =80 s , V CE =20V
μ
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
VGE (V)
800 V
V GE (V)
I C (A)
10
8
6
4
2
0
0
100
200
300
400
500
QGate (nC)
Fig. 9 Typ. Capacitances , C =f (V CE )
Parameter:V GE =0 , f=1MHz
10
2
Fig.10 Reverse biased safe operating area ,
I Cplus =f (V CE ) , T j =150 C
Parameter:V GE =0 , f=1MHz V GE =15V
2.5
2.0
10
1
Ciss
I cpuls / I C
1.5
C(nF)
1.0
10
0
Coss
0.5
Crss
10
-1
0
5
10
15
20
VCE (V)
25
30
35
40
0.0
0
200
400
600
800 1000 1200 1400 1600
VCE (V)
www.nellsemi.com
Page 4 of 6
SEMICONDUCTOR
NSGM75GB Series
10
4
RoHS
RoHS
Fig.11 Short circuit safe operating area , I Csc =f (V CE ) , T j =150 C
Parameter:V GE =+15V , t SC <10
μ
,L<50nH
s
12
Fig.12 Typ. switching time , I= f I C , inductive load , T j =125 C
Parameter:V CE =600V , V GE =+15V , R G =15
Ω
10
8
10
3
I Csc / I C
6
t (ns)
tdoff
4
10
2
tr
tf
2
tdon
0
0
200
400
600
800 1000 1200 1400 1600
VCE (V)
10
1
0
20
40
60
80
100 120 140 160 180
IC (A)
Fig.13 Typ. Switching time , t =f (R G ) , inductive load , T j =125 C
Parameter:V CE =600V , I C =75A
10
4
Fig.14 Typ. switching losses , E =f (I C ) , Inductive load , T j =125 C
Parameter: V CE =600V , V GE =+15V , RG=15
Ω
40
35
Eon
tdoff
10
3
30
25
E (mWs)
t (ns)
20
Eoff
tr
tdon
10
2
15
tf
10
5
10
1
0
0
10
20
30
40
50
RG (
Ω
)
60
70
80
0
20
40
60
80 100 120 140 160 180
IC (A)
www.nellsemi.com
Page 5 of 6
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
