SEMICONDUCTOR
GBU25 Series
RoHS
RoHS
Nell High Power Products
Glass Passivated Single-Phase Bridge Rectifier, 25A
GBU25D Thru GBU25M
22±0.1
15.2±0.1
3.6±0.1
3.5±0.15
18.5±0.1
2±0.1
~ ~
17.8±0.5
+
0.5±0.01
1±0.05
5.08±0.05
All dimensions in millimeters
FEATURES
UL recognition file number E320098
Typical IR less than 2.0 µA
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for big power supply, field supply for
DC motor, industrial automation applications.
~
~
+
ADVANTAGE
International standard package
Epoxy meets UL 94 V-0 flammability rating
Small volume, light weight
Small thermal resistance
High heat-conduction rate
Low temperature rise
High temperature soldering guaranteed :
260°C/10 second, 2.3kg tension force
Weight: 4.0g (0.14 ozs)
PRIMARY CHARACTERRISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J max.
25A
400V to 1000V
350A
5
µA
1.10V
150ºC
www.nellsemi.com
Page 1 of 3
10±0.1
SEMICONDUCTOR
GBU25 Series
RoHS
RoHS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
GBU25
PARAMETER
SYMBOL
UNIT
D
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Maximum DC blocking voltage
Maximum average forward rectified output current, T
c
= 85°C
Peak forward surge current single sine-wave superimposed on
rated load
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I
2
t
V
ISO
T
J
T
STG
V
RRM
V
RSM
V
DC
I
F(AV)
I
FSM
G
400
500
400
J
600
700
600
25
350
K
800
900
800
M
1000
1100
1000
V
V
V
A
A
200
300
200
508
2500
-40
to 150
-40
to 150
A
2
s
V
ºC
ºC
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
I
F
= 12.5A
T
A
= 25°C
T
A
= 150°C
GBU25
SYMBOL
UNIT
D
V
F
I
R
G
J
1.10
5
500
K
M
V
µA
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
THERMAL AND MECHANICAL (T
A
= 25°C unless otherwise noted)
GBU25
PARAMETER
TEST CONDITIONS
SYMBOL
UNIT
D
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
G
J
1.0
K
M
°C/W
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of
3
hours to allow for the spread
of the compound.
R
θJC
(1)
to heatsink M3
0.8
N.m
Approximate weight
4.0
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
GBU
1
25
K
3
2
1
2
3
-
-
-
Product type : “GBU” Package,1Ø Bridge
I
F(AV)
rating :
"25"
for
25A
Voltage code : D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
www.nellsemi.com
Page 2 of 3
SEMICONDUCTOR
GBU25 Series
RoHS
RoHS
Nell High Power Products
Fig.1 Derating curve for output rectified current
Fig.2 Maximum non-repetitive peak forward
surge current per bridge element
25
400
T
J
= 25°C
Average forward output current, (A)
20
Forward surge current, (A)
300
15
200
10
100
5
0
0
50
100
150
0
1
10
Number of cycles at 50H
z
100
Ambient temperature (°C)
Fig.3 Typical reverse characteristics per
bridge element
Fig.4 Typical forward characteristics per
bridge element
1000
Instantaneous reverse output current, (μA)
100
100
Instantaneous forward current, (A)
10
T
J
= 1
25°C
10
1.0
1.0
0.1
T
J
C
= 25°
T J = 25°C
0.01
0
20
40
60
80
100
120
140
0.1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Percent of rated peak reverse voltage (%)
Forward voltage (v)
www.nellsemi.com
Page 3 of 3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
