SEMICONDUCTOR
RoHS
70PT Series
RoHS
Stansard SCRs, 70A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
75
800 to 1800
100
Unit
A
V
mA
DESCRIPTION
The 70PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
high power motor control, high power switching and
phase control applications.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500V
RMS
).
1
2
3
2(A)
TO-247S
(non-Insulated)
(70PTxxD)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Lead current limitation
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
V
D
= 67% V
DRM
, t
p
= 200μs, I
G
= 0.3A
d
IG
/dt = 0.3A/μs
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
V
RGM
T
j
=125ºC
800
to 1800
- 40
to
+ 150
ºC
- 40
to
+ 125
5
V
V
T
p
= 20 µs
T
p
=20µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
2.5
10
2
A
W
W
SYMBOL
TEST CONDITIONS
VALUE
UNIT
I
T(RMS)
TO-247S
T
c
=80°C
75
A
I
T(AV)
TO-247S
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
c
=80°C
t = 20 ms
t = 16.7 ms
70
1300
1500
8450
A
I
TSM
I
2
t
A
A
2
s
dI/dt
F = 60 Hz
T
j
= 125ºC
150
A/µs
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Page 1 of 4
SEMICONDUCTOR
RoHS
70PT Series
RoHS
ORDERING INFORMATION SCHEME
70 PT 06
Current
70 = 75A,
I
T(RMS)
D
SCR series
Voltage Code
08 = 800V
10 = 1000V
12 = 1200V
16 = 1600V
18 = 1800V
Package type
D = TO-247S
Fig.1 Maximum power dissipation versus
RMS on-state current (full cycle)
P(W)
180
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
40
30
20
80
70
60
50
Fig.2 RMS on-state current versus case
temperature (full cycle)
I
T(RMS)
TO-247S
l
T(RMS)
(A)
10
0
0
25
50
T
C
(°
C
)
75
100
125
Fig.3 On-state characteristics
(maximum values).
Fig.4 Surge peak on-state current versus
number of cycles.
I
TSM
(A)
1350
1200
1000
I
TM
(A)
T
j
max.
Vto
= 0.85
V
Rd
= 10
mΩ
T
j
=25
°
C
1050
900
750
Non repetitive
T
j
initial=25°C
One cycle
t=20ms
100
T
j
=T
j
max
600
450
300
Repetitive
T
c
= 80°C
V
TM
(V)
10
0
1
2
3
4
5
150
0
1
10
Number of cycles
100
1000
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Page 3 of 4
SEMICONDUCTOR
RoHS
70PT Series
RoHS
Fig.5 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
value of l
2
t .
Fig.6 Relative variations of gate trigger
current, holding current and latching
current versus junction temperature
(typical values)
I
TSM
(A),
l
2
t
(A
2
s)
10000
T
j
initial=25°C
l
GT
,
l
H
,
l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
3.0
I
2
t
I
TSM
2.5
2.0
1.5
1.0
0.5
dI/dt
≤
150A/µs
1000
l
GT
l
H
&l
L
tp
(ms)
T
j
(°C)
1.0
10.0
0.0
-40
-20
0
20
40
60
80
100
120
140
100
0.01
0.1
Case Style
TO-247S
16.1(0.632)
15.1(0.595)
2.4(0.095)
2(0.079)
2.15(0.084)
1.45(0.058)
5.5(0.216)
4.5(0.178)
20.8(0.818)
19.8(0.76)
2.8(0.110)
1.9(0.075)
4.0(0.157)
3.0(0.118)
14.8(0.582)
13.8(0.544)
0.8(0.032)
0.55(0.022)
3.35(0.132)
2.75(0.108)
5.8(0.228)
5.1(0.201)
1.5(0.059)
1.3(0.051)
5.8(0.228)
5.1(0.201)
2
(A2)
(G)3
1(A1)
All dimensions in millimeters (inches)
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Page 4 of 4
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