UNISONIC TECHNOLOGIES CO., LTD
4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
MIDDLING VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC
4128D
is a middling voltage NPN power transistor. it
uses UTC’s advanced technology to provide customers with high
switching speed and high reliability, etc.
The UTC
4128D
is suitable for commonly power amplifier
circuit, electronic ballasts and energy-saving light etc.
1
TO-126
FEATURES
* High switching speed
* High reliability
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4128DL-T60-K
4128DG-T60-K
Note: Pin Assignment: B: Base C: Collector
E: Emitter
4128DL-T60-T
(1)Packing Type
(2)Package Type
(3)Lead Free
Package
TO-126
Pin Assignment
1
2
3
B
C
E
Packing
Bulk
(1) B: Bulk
(2) T60: TO-126
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R204-029.A
4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (V
BE
=0)
V
CES
350
V
Collector-Emitter Voltage (I
B
=0)
V
CEO
200
V
Emitter-Base Voltage
V
EBO
7
V
5
A
DC
I
C
Collector Current
Pulse (Note 2)
I
CP
10
A
2
A
DC
I
B
Base Current
Pulse (Note 2)
I
BP
4
A
Total Dissipation
P
C
40
W
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θ
JC
RATINGS
3.125
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
BE(SAT)
h
FE1
h
FE2
f
T
t
S
t
F
TEST CONDITIONS
I
C
=1mA, I
B
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=350V, I
E
=0
V
CE
=200V, I
B
=0
V
EB
=7V, I
C
=0
I
C
=1A, I
B
=0.2A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
I
C
=0.8A,V
CE
=5V
I
C
=3A,V
CE
=5V
I
C
=0.5A, V
CE
=10V
V
CC
=24V, I
C
=0.5A, I
B1
=-I
B2
=0.1A
MIN TYP MAX UNIT
350
V
200
V
7
V
100 µA
50
µA
10
μA
0.8
V
1.5
V
1.6
V
8
50
8
4
MHz
4
μs
0.7
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-029.A
4128D
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-029.A
PCB设计
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