EDO DRAM Module, 1MX32, 70ns, CMOS
| 参数名称 | 属性值 |
| 厂商名称 | SK Hynix(海力士) |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO |
| 最长访问时间 | 70 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| 备用内存宽度 | 16 |
| JESD-30 代码 | R-XZMA-N72 |
| 内存密度 | 33554432 bit |
| 内存集成电路类型 | EDO DRAM MODULE |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 72 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 1MX32 |
| 输出特性 | 3-STATE |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified |
| 刷新周期 | 1024 |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | NO LEAD |
| 端子位置 | ZIG-ZAG |
| HYM5V32124ATXG-70 | HYM5V32124ASLTXG-70 | HYM5V32124ASLTXG-80 | HYM5V32124ATXG-80 | HYM5V32124ASLTXG-60 | HYM5V32124ATXG-60 | |
|---|---|---|---|---|---|---|
| 描述 | EDO DRAM Module, 1MX32, 70ns, CMOS | EDO DRAM Module, 1MX32, 70ns, CMOS | EDO DRAM Module, 1MX32, 80ns, CMOS | EDO DRAM Module, 1MX32, 80ns, CMOS | EDO DRAM Module, 1MX32, 60ns, CMOS | EDO DRAM Module, 1MX32, 60ns, CMOS |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| 最长访问时间 | 70 ns | 70 ns | 80 ns | 80 ns | 60 ns | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| 备用内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 |
| JESD-30 代码 | R-XZMA-N72 | R-XZMA-N72 | R-XZMA-N72 | R-XZMA-N72 | R-XZMA-N72 | R-XZMA-N72 |
| 内存密度 | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit |
| 内存集成电路类型 | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 72 | 72 | 72 | 72 | 72 | 72 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 1MX32 | 1MX32 | 1MX32 | 1MX32 | 1MX32 | 1MX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG |
聊聊、笑笑、闹闹
电子竞赛
PCB设计
测试/测量
电源技术
电子竞赛
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
