Si4435BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
FEATURES
I
D
(A)
- 9.1
- 6.9
r
DS(on)
(W)
0.020 @ V
GS
= - 10 V
0.035 @ V
GS
= - 4.5 V
D
TrenchFETr Power MOSFET
D
Advanced High Cell Density Process
APPLICATIONS
D
Load Switches
D
Battery Switch
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4435BDY
Si4435BDY-T1 (with Tape and Reel
8
7
6
5
D
D
D
D
G
S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
- 30
"20
Unit
V
- 9.1
- 7.3
- 50
- 2.1
2.5
1.6
- 55 to 150
-7
- 5.6
A
- 1.25
1.5
0.9
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72123
S-31990—Rev. B, 13-Oct-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
40
70
18
Maximum
50
85
22
Unit
_C/W
C/W
1
Si4435BDY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 9.1 A
V
GS
= - 4.5 V, I
D
= - 6.9 A
V
DS
= - 10 V, I
D
= - 9.1 A
I
S
= - 2.1 A, V
GS
= 0 V
- 40
0.015
0.025
24
- 0.8
- 1.2
0.020
0.035
-1
-3
"100
-1
- 25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 2.1 A, di/dt = 100 A/ms
V
DD
= - 15 V, R
L
= 15
W
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 9.1 A
33
5.8
8.6
10
15
110
70
60
15
25
170
110
90
ns
70
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 6 V
5V
I
D
- Drain Current (A)
4V
30
50
T
C
= - 55_C
40
25_C
Transfer Characteristics
40
I
D
- Drain Current (A)
30
125_C
20
20
10
3V
10
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
- Gate-to-Source Voltage (V)
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Document Number: 72123
S-31990—Rev. B, 13-Oct-03
Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.040
r
DS(on)
- On-Resistance (
W
)
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
10
20
30
40
50
0
0
5
10
15
20
25
30
V
GS
= 10 V
C - Capacitance (pF)
V
GS
= 4.5 V
1800
C
iss
2400
Capacitance
1200
600
C
oss
C
rss
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 9.1 A
8
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 9.1 A
1.4
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
20
30
40
1.2
4
1.0
2
0.8
0
0
10
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.10
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
- On-Resistance (
W
)
0.08
I
S
- Source Current (A)
0.06
I
D
= 9.1 A
T
J
= 25_C
0.04
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72123
S-31990—Rev. B, 13-Oct-03
www.vishay.com
3
Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
30
Single Pulse Power
0.4
V
GS(th)
Variance (V)
I
D
= 250
mA
24
Power (W)
0.2
18
0.0
12
- 0.2
6
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
10
-2
10
-1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
100
Safe Operating Area, Junction-to-Ambient
r
DS(on)
Limited
I
DM
Limited
P(t) = 0.0001
10
I
D
- Drain Current (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
T
A
= 25_C
Single Pulse
P(t) = 1
P(t) = 10
dc
0.01
0.1
1
BV
DSS
Limited
10
100
0.1
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
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4
Document Number: 72123
S-31990—Rev. B, 13-Oct-03
Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72123
S-31990—Rev. B, 13-Oct-03
www.vishay.com
5
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