Si3433BVD
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.042 @ V
GS
= -4.5 V
-20
0.057 @ V
GS
= -2.5 V
0.080 @ V
GS
= -1.8 V
I
D
(A)
-5.6
- 4.8
- 4.1
(4) S
TSOP-6
Top View
1
6
(3) G
3 mm
2
5
3
4
(1, 2, 5, 6) D
P-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
-1.7
2.0
1.0
-55 to 150
- 4.1
-20
-0.9
1.1
0.6
W
_C
-3.1
A
Symbol
V
DS
V
GS
5 secs
Steady State
-20
"8
Unit
V
- 5.6
-4.3
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72027
S-22128—Rev. A, 25-Nov-02
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
50
90
35
Maximum
60
110
42
Unit
_C/W
C/W
1
Si3433BVD
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= -250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= -16 V, V
GS
= 0 V
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
= -5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -5.6 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -4.8 A
V
GS
= -1.8 V, I
D
= -1 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= -5 V, I
D
= -5.6 A
I
S
= -1.7 A, V
GS
= 0 V
-20
0.034
0.045
0.060
10
-0.7
-1.2
0.042
0.057
0.080
S
V
W
-0.45
-0.85
"100
-1
-5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -1.7 A, di/dt = 100 A/ms
V
DD
= -10 V, R
L
= 10
W
I
D
^
-1 A, V
GEN
= -4.5 V, R
G
= 6
W
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -5.6 A
12
1.7
3.5
15
45
80
60
40
25
75
130
100
70
ns
18
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V
GS
= 5 thru 2.5 V
16
I
D
- Drain Current (A)
2V
I
D
- Drain Current (A)
16
20
Transfer Characteristics
12
12
8
1.5 V
4
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
8
T
C
= 125_C
4
25_C
-55
_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72027
S-22128—Rev. A, 25-Nov-02
www.vishay.com
2
Si3433BVD
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
r
DS(on)
- On-Resistance (
W
)
2500
Vishay Siliconix
Capacitance
V
GS
= 1.8 V
0.09
C - Capacitance (pF)
0.12
2000
1500
C
iss
1000
0.06
V
GS
= 2.5 V
0.03
V
GS
= 4.5 V
0.00
0
4
8
12
16
20
500
C
oss
C
rss
0
4
8
12
16
20
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 5.6 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.6 A
1.4
3
r
DS(on)
- On-Resistance (
W)
(Normalized)
6
9
12
1.2
2
1.0
1
0.8
0
0
3
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
T
J
= 150_C
I
S
- Source Current (A)
10
r
DS(on)
- On-Resistance (
W
)
0.12
0.15
On-Resistance vs. Gate-to-Source Voltage
0.09
I
D
= 5.6 A
0.06
0.03
T
J
= 25_C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72027
S-22128—Rev. A, 25-Nov-02
www.vishay.com
3
Si3433BVD
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
20
Single Pulse Power
0.3
V
GS(th)
Variance (V)
I
D
= 250
mA
0.2
Power (W)
16
12
T
A
= 25_C
8
0.1
0.0
4
-0.1
-0.2
-50
-25
0
25
50
75
100
125
150
0
10
- 2
10
- 1
1
Time (sec)
10
100
600
T
J
- Temperature (_C)
Safe Operating Area
100
r
DS(on)
Limited
10
I
D
- Drain Current (A)
I
DM
Limited
10
ms
100
ms
1 ms
1
10 ms
100 ms
1s
10 s
dc, 100 s
BV
DSS
Limited
0.01
0.1
1
10
100
0.1
T
A
= 25_C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 360_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72027
S-22128—Rev. A, 25-Nov-02
Si3433BVD
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72027
S-22128—Rev. A, 25-Nov-02
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
