DIGITRON SEMICONDUCTORS
1N957B-1N992B
MAXIMUM RATINGS
Rating
Operating temperature
Storage temperature
Thermal resistance
Steady-state power
Forward voltage
Solder temperature
1.
FR4 PC board with 4mm
2
copper pads and track width 1mm, length 25mm.
500mW SILICON ZENER DIODES
Value
-65°C to +175°C
-65°C to +175°C
250°C/W junction to lead at 3/8” lead length from body, or 310°C/W junction to ambient when
mounted on FR4 PC board
(1)
0.5W at T
L
≤
50°C 3/8” from body or 0.48W at T
A
≤
25°C when mounted on FR4 PC board
(1)
@ 200 mA: 1.1 volts maximum (1N957B-1N985B)
@ 200mA: 1.3 volts maximum (1N985-1N992B)
260°C for 10 s maximum
ELECTRICAL CHARACTERISTICS @ 25°C
Nominal
zener
voltage
(2)
Part
number
(1)
Zener
test
current
I
ZT
mA
18.5
16.5
15.0
14.0
12.5
11.5
10.5
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.0
1.8
1.7
1.5
Maximum zener
impedance
(3)
Z
ZT
@
I
ZT
Ohms
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13
16
17
21
25
29
33
41
49
58
70
80
93
105
125
150
185
230
270
330
Maximum
DC zener
current
(4)
Maximum
surge
current
(5)
Maximum reverse
leakage current
Maximum
temperature
coefficient
α
vz
%/°C
0.05
0.058
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.083
0.085
0.086
0.087
0.088
0.090
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.098
0.098
V
Z
Volts
Z
ZK
Ohms
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
@I
ZK
mA
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
ZM
mA
55
50
45
41
38
32
31
28
25
24
20
18
16
15
13
12
11
10
9.5
8.8
7.9
7.4
6.8
6.0
5.5
5.0
4.6
I
ZSM
mA
300
275
250
225
200
175
160
150
130
120
110
100
90
80
70
65
60
55
46
44
40
37
35
30
28
26
23
I
R
µA
150
75
50
25
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
@V
R
Volts
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
1N977B
1N978B
1N979B
1N980B
1N981B
1N982B
1N983B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120730
DIGITRON SEMICONDUCTORS
1N957B-1N992B
Nominal
zener
voltage
(2)
500mW SILICON ZENER DIODES
Maximum zener
impedance
(3)
Z
ZT
@
I
ZT
Ohms
400
500
750
900
1100
1500
1700
2200
2500
Maximum
DC zener
current
(4)
Part
number
(1)
Zener
test
current
I
ZT
mA
1.4
1.3
1.1
1.0
0.95
0.85
0.80
0.68
0.65
Maximum
surge
current
(5)
Maximum reverse
leakage current
Maximum
temperature
coefficient
α
vz
%/°C
0.099
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
V
Z
Volts
Z
ZK
Ohms
3000
3000
4000
4500
5000
6000
6500
7100
8000
@I
ZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
ZM
mA
4.1
3.7
3.3
3.1
2.7
2.4
2.2
2.0
1.8
I
ZSM
mA
21
18
16
15
13
12
11
10
9
I
R
µA
5
5
5
5
5
5
5
5
5
@V
R
Volts
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
1N984B
1N985B
1N986B
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
91
100
110
120
130
150
160
180
200
NOTE 1. Zener voltage tolerance on ‘’B’’ suffix is + 5%. Suffix letter A denotes +10%. No suffix denotes +20% tolerance. ‘’C’’ suffix denotes + 2% and ‘’D’’ suffix denotes + 1%.
NOTE 2. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C.
NOTE 3. Zener impedance is derived by superimposing on I
ZTA
60HZ rms a.c. current equal to 10% of I
ZT
.
NOTE 4: The values of I
ZM
are calculated for a ±5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above V
ZT
which results from zener
impedance and the increase in junction temperature as power dissipation approaches 400mW. In the case of individual diodes I
ZM
is that value of current which results in a
dissipation of 400mW at 75°C lead temperature at 3/8” from body.
NOTE 5: The surge for I
ZM
is a square wave or equivalent half-sine wave pulse of 1/120 second duration.
MECHANICAL CHARACTERISTICS
Case
Marking
Polarity
Hermetically sealed glass DO-35
Body painted, alph-numeric
Cathode band
Dimensions
Inches
Min
BD
BL
LD
LL
0.055
0.120
0.018
1.000
Max
0.090
0.200
0.022
1.500
Millimeters
Min
1.400
3.050
0.460
25.400
Max
2.290
5.080
0.560
38.100
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix)
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120730
GD32 MCU
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