Si7448DP
New Product
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
FEATURES
I
D
(A)
22
19
r
DS(on)
(W)
0.0065 @ V
GS
= 4.5 V
0.009 @ V
GS
= 2.5 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D
Synchronous Rectifier–Low Output Voltage
D
Portable Computer Battery Selection or
Protection
PowerPakt SO-8
D
6.15 mm
S
1
2
3
4
D
8
7
6
5
D
D
D
S
S
G
5.15 mm
G
S
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
20
"12
22
Steady State
Unit
V
13.4
10.7
50
A
1.6
1.9
1.2
–55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
17.6
4.3
5.2
3.3
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71635
S-04019—Rev. A, 11-Jun-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJC
Symbol
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
_C/W
C/W
1
Si7448DP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85_C
V
DS
w
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 22 A
V
GS
= 2.5 V, I
D
= 19 A
V
DS
= 15 V, I
D
= 22 A
I
S
= 3 A, V
GS
= 0 V
50
0.0054
0.0075
90
0.8
1.2
0.0065
0.009
S
V
0.6
"100
1
20
V
nA
mA
m
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3 A, di/dt = 100 A/ms
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 21 A
38
8
8.5
0.9
22
22
125
60
60
35
35
190
90
90
ns
W
50
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 4.5 thru 2.5 V
40
2V
I
D
– Drain Current (A)
30
I
D
– Drain Current (A)
30
40
50
Transfer Characteristics
20
20
T
C
= 125_C
10
25_C
–55_C
0
0.0
10
1.5 V
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71635
S-04019—Rev. A, 11-Jun-01
Si7448DP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.012
7000
6000
C – Capacitance (pF)
C
iss
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
0
4
8
12
16
20
C
rss
C
oss
Vishay Siliconix
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.010
V
GS
= 2.5 V
V
GS
= 4.5 V
0.008
0.006
0.004
0.002
0.000
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 22 A
1.6
On-Resistance vs. Junction Temperature
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
4
1.4
V
GS
= 10 V
I
D
= 22 A
1.2
2
1.0
1
0.8
0
0
8
16
24
32
40
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.020
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
I
S
– Source Current (A)
0.015
I
D
= 22 A
T
J
= 150_C
10
0.010
T
J
= 25_C
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71635
S-04019—Rev. A, 11-Jun-01
www.vishay.com
3
Si7448DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
V
GS(th)
Variance (V)
–0.0
–0.2
–0.4
–0.6
20
–0.8
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (_C)
Power (W)
60
I
D
= 250
mA
80
100
Single Pulse Power, Juncion-To-Ambient
40
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 71635
S-04019—Rev. A, 11-Jun-01
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