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MBR1035C0

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, TO-220AC,
产品类别分立半导体    二极管   
文件大小231KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

MBR1035C0概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, TO-220AC,

MBR1035C0规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.7 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流150 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压35 V
最大反向电流100 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
MBR1035 thru MBR10200
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
TO-220AC
MECHANICAL DATA
Case:
TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=10A, T
J
=25℃
I
F
=10A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
1.0
0.70
0.57
I
R
dV/dt
R
θJC
T
J
T
STG
15
0.80
0.70
0.1
10
10000
3
- 55 to +150
- 55 to +175
6
MBR
1035
35
24
35
MBR
1045
45
31
45
MBR
1050
50
35
50
MBR
1060
60
42
60
10
20
150
0.5
0.85
0.71
1.05
-
mA
V/μs
O
MBR
1090
90
63
90
MBR
100
70
100
MBR
150
105
150
MBR
200
140
200
10100 10150 10200
UNIT
V
V
V
A
A
A
A
V
C/W
O
O
C
C
Document Number: DS_D1308050
Version: L13

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